DOI: 10.1063/1.103546. InAs-AlSb quantum well as superconducting weak link with high critical current density

InAs-AlSb quantum well as superconducting weak link with high critical current density

10.1063/1.103546

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have constructed a superconductor-semiconductor weak link using an InAs-AlSb quantum well as the channel between Nb electrodes. The structure draws on (a) the barrier-free nature of the Nb-InAs interfaces and (b) the combination of high electron concentrations and very high electron mobilities in the InAs wells, which yield a large superconducting coherence length (3700 Å) inside the channel. A large (lineal) critical supercurrent density of 32 mA/mm was obtained at 1.4 K, for a channel length of 0.6 μm. After temporary exposure to a magnetic field, the current-voltage characteristic became hysteretic, with an increase in critical current density to 132 mA/mm. The latter value corresponds to an areal current density of 8.8×105 A/cm2.

Bibliography

Nguyen, C., Werking, J., Kroemer, H., & Hu, E. L. (1990). InAs-AlSb quantum well as superconducting weak link with high critical current density. Applied Physics Letters, 57(1), 87â89.

Authors 4

Chanh Nguyen (first)
James Werking (additional)
Herbert Kroemer (additional)
Evelyn L. Hu (additional)

References 14 Referenced 57

{'key': '2024020301080497500_r1', 'first-page': '703', 'volume': 'MAG-23', 'year': '1987', 'journal-title': 'IEEE Trans. Mag.'} / IEEE Trans. Mag. (1987)
10.1103/PhysRevLett.54.2449 / Phys. Rev. Lett. (1985)
{'key': '2024020301080497500_r3'}
10.1063/1.342930 / J. Appl. Phys. (1989)
10.1063/1.343594 / J. Appl. Phys. (1989)
10.1063/1.102166 / Appl. Phys. Lett. (1989)
10.1063/1.327935 / J. Appl. Phys. (1980)
{'key': '2024020301080497500_r8', 'first-page': '1394', 'volume': 'ED-28', 'year': '1981', 'journal-title': 'IEEE Trans. Electron Dev.'} / IEEE Trans. Electron Dev. (1981)
10.1109/55.32429 / IEEE Electron Dev. Lett. (1989)
{'issue': '3', 'key': '2024020301080497500_r10', 'first-page': 'DP31', 'volume': '26', 'year': '1987', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1987)
{'key': '2024020301080497500_r10a'}
10.1063/1.343167 / J. Appl. Phys. (1989)
10.1116/1.583757 / J. Vac. Sci. Technol. B (1987)
{'key': '2024020301080497500_r13'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 8:08 p.m.)
Indexed	1 month, 3 weeks ago (July 4, 2025, 8:45 a.m.)
Issued	35 years, 1 month ago (July 2, 1990)
Published	35 years, 1 month ago (July 2, 1990)
Published Print	35 years, 1 month ago (July 2, 1990)

Funders 0

None

BibTeX

@article{Nguyen_1990, title={InAs-AlSb quantum well as superconducting weak link with high critical current density}, volume={57}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103546}, DOI={10.1063/1.103546}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nguyen, Chanh and Werking, James and Kroemer, Herbert and Hu, Evelyn L.}, year={1990}, month=jul, pages={87–89} }

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