DOI: 10.1063/1.103512. Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap

Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap

10.1063/1.103512

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

It is demonstrated using rapid thermal annealing that the electrical activation of Si+-implanted GaAs capped with a plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SixNy) layer requires longer annealing times compared to capless annealing. The SIMS profiles of 2H from the GaAs samples onto which SixNy caps were deposited using deuterated ammonia showed that deuterium atoms diffuse readily into the implanted region during PECVD. The improvement in the electrical activation of the capped samples with annealing time correlates directly with decreasing concentration of the 2H in the GaAs. It is postulated that the H atoms diffusing into GaAs during PECVD are trapped by the implantation-induced damage and the delay in electrical activation corresponds to the time required for the release of the trapped H.

Bibliography

de Souza, J. P., Sadana, D. K., Baratte, H., & Cardone, F. (1990). Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap. Applied Physics Letters, 57(11), 1129â1131.

Authors 4

J. P. de Souza (first)
D. K. Sadana (additional)
H. Baratte (additional)
F. Cardone (additional)

References 14 Referenced 16

10.1143/JJAP.24.L193 / Jpn. J. Appl. Phys. (1985)
10.1063/1.335336 / J. Appl. Phys. (1985)
10.1063/1.96837 / Appl. Phys. Lett. (1986)
{'key': '2024020301262554600_r4'}
10.1016/0040-6090(83)90421-2 / Thin Solid Films (1983)
10.1149/1.2086517 / J. Electrochem. Soc. (1990)
10.1007/BF00615975 / Appl. Phys. A (1987)
{'key': '2024020301262554600_r8', 'first-page': '2921', 'volume': '59', 'year': '1986', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1986)
10.1088/0268-1242/4/11/008 / Semi. Sci. Technol. (1989)
10.1063/1.96284 / Appl. Phys. Lett. (1985)
10.1103/PhysRevB.33.1102 / Phys. Rev. B (1986)
10.1063/1.335637 / J. Appl. Phys. (1985)
{'key': '2024020301262554600_r13'}
{'key': '2024020301262554600_r14'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 8:26 p.m.)
Indexed	1 year, 6 months ago (Feb. 6, 2024, 7:28 p.m.)
Issued	34 years, 11 months ago (Sept. 10, 1990)
Published	34 years, 11 months ago (Sept. 10, 1990)
Published Print	34 years, 11 months ago (Sept. 10, 1990)

Funders 0

None

BibTeX

@article{de_Souza_1990, title={Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap}, volume={57}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103512}, DOI={10.1063/1.103512}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={de Souza, J. P. and Sadana, D. K. and Baratte, H. and Cardone, F.}, year={1990}, month=sep, pages={1129–1131} }

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