Abstract
Epitaxial YBa2Cu3O7 films were grown on Al2O3 {1̄012} by a laser ablation technique. X-ray diffraction shows that films are epitaxial with the c axis perpendicular to the substrate surface and ‘‘123’’ [110] aligned with sapphire [101̄1], although the full width at half maximum of the rocking curve is larger than those of epitaxial films on SrTiO3. Typical Tc’s are between 85 and 88 K with transition widths between 0.5 and 3 K. The normal-state resistivity is 270 μΩ cm at 300 K and extrapolates to zero at zero temperature while the magnetization Jc is as high as 5×106 A/cm2 at 4.2 K. High-frequency loss measurements show that 2000-Å-thick epitaxial films on Al2O3 {1̄012} have a surface impedance about 1 mΩ at 13 GHz at 4.2 K.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:51 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 7:42 p.m.) |
Indexed | 3 months, 1 week ago (May 26, 2025, 9:25 a.m.) |
Issued | 35 years, 6 months ago (Feb. 19, 1990) |
Published | 35 years, 6 months ago (Feb. 19, 1990) |
Published Print | 35 years, 6 months ago (Feb. 19, 1990) |
@article{Char_1990, title={Properties of epitaxial YBa2Cu3O7 thin films on Al2O3 {1̄012}}, volume={56}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103317}, DOI={10.1063/1.103317}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Char, K. and Fork, D. K. and Geballe, T. H. and Laderman, S. S. and Taber, R. C. and Jacowitz, R. D. and Bridges, F. and Connell, G. A. N. and Boyce, J. B.}, year={1990}, month=feb, pages={785–787} }