DOI: 10.1063/1.103200. Neutral electron trap generation in SiO2 by hot holes

Neutral electron trap generation in SiO2 by hot holes

10.1063/1.103200

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Experimental evidence for neutral electron trap generation in SiO2 caused by injected holes is presented. The neutral electron traps are detected by Fowler–Nordheim (FN) tunneling electron injection after avalanche hole injection. The density of generated neutral traps increases with the number of injected holes, but does not saturate with that of the trapped holes. The centroid of generated neutral traps is found to be in the middle of the oxide. These results suggest that neutral traps are generated by the holes and not only by the recombination of electrons with trapped holes. The origin of neutral traps is considered to be associated with dipolar defects formed by SiO bond breaking under hole transport in the oxide.

Bibliography

Ogawa, S., Shiono, N., & Shimaya, M. (1990). Neutral electron trap generation in SiO2 by hot holes. Applied Physics Letters, 56(14), 1329â1331.

Authors 3

Shigeo Ogawa (first)
Noboru Shiono (additional)
Masakazu Shimaya (additional)

References 16 Referenced 43

10.1063/1.322706 / J. Appl. Phys. (1976)
10.1063/1.325241 / J. Appl. Phys. (1978)
10.1063/1.325368 / J. Appl. Phys. (1978)
{'key': '2024020300490273800_r4'}
10.1063/1.93115 / Appl. Phys. Lett. (1982)
{'key': '2024020300490273800_r6', 'first-page': '386', 'volume': 'ED-34', 'year': '1987', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1987)
{'key': '2024020300490273800_r7', 'first-page': '4544', 'volume': '61', 'year': '1985', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1985)
{'key': '2024020300490273800_r8', 'first-page': '2128', 'volume': 'NS-24', 'year': '1977', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1977)
{'key': '2024020300490273800_r9', 'first-page': '31', 'volume': '40', 'year': '1960', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1960)
10.1063/1.1657043 / J. Appl. Phys. (1969)
10.1063/1.323115 / J. Appl. Phys. (1976)
10.1063/1.1663246 / J. Appl. Phys. (1974)
10.1137/0111030 / J. Soc. Indust. Appl. Math. (1963)
10.1063/1.332323 / J. Appl. Phys. (1983)
{'key': '2024020300490273800_r15', 'first-page': '1640', 'volume': 'NS-27', 'year': '1980', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1980)
10.1063/1.337204 / J. Appl. Phys. (1986)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 7:49 p.m.)
Indexed	3 months, 1 week ago (May 16, 2025, 1:45 a.m.)
Issued	35 years, 4 months ago (April 2, 1990)
Published	35 years, 4 months ago (April 2, 1990)
Published Print	35 years, 4 months ago (April 2, 1990)

Funders 0

None

BibTeX

@article{Ogawa_1990, title={Neutral electron trap generation in SiO2 by hot holes}, volume={56}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103200}, DOI={10.1063/1.103200}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ogawa, Shigeo and Shiono, Noboru and Shimaya, Masakazu}, year={1990}, month=apr, pages={1329–1331} }

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