DOI: 10.1063/1.103121. Formation of a high quality two-dimensional electron gas on cleaved GaAs

Formation of a high quality two-dimensional electron gas on cleaved GaAs

10.1063/1.103121

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×105 cm2/V s are measured in the 2DEG at the cleaved interface.

Bibliography

Pfeiffer, L., West, K. W., Stormer, H. L., Eisenstein, J. P., Baldwin, K. W., Gershoni, D., & Spector, J. (1990). Formation of a high quality two-dimensional electron gas on cleaved GaAs. Applied Physics Letters, 56(17), 1697â1699.

Authors 7

Loren Pfeiffer (first)
K. W. West (additional)
H. L. Stormer (additional)
J. P. Eisenstein (additional)
K. W. Baldwin (additional)
D. Gershoni (additional)
J. Spector (additional)

References 11 Referenced 348

{'key': '2024020300561501600_r1'}
{'key': '2024020300561501600_r2'}
{'key': '2024020300561501600_r3', 'first-page': '1880', 'volume': '55', 'year': '1989', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1989)
{'key': '2024020300561501600_r4'}
10.1116/1.582567 / J. Vac. Sci. Technol. B (1983)
10.1557/PROC-46-391 / Mater. Res. Soc. Symp. Proc. (1985)
10.1063/1.98329 / Appl. Phys. Lett. (1987)
10.1016/0022-0248(87)90394-0 / J. Cryst. Growth (1987)
{'key': '2024020300561501600_r9'}
{'key': '2024020300561501600_r10'}
10.1103/PhysRevB.27.6487 / Phys. Rev. B (1983)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 7:56 p.m.)
Indexed	2 months, 3 weeks ago (June 6, 2025, 5:08 a.m.)
Issued	35 years, 4 months ago (April 23, 1990)
Published	35 years, 4 months ago (April 23, 1990)
Published Print	35 years, 4 months ago (April 23, 1990)

Funders 0

None

BibTeX

@article{Pfeiffer_1990, title={Formation of a high quality two-dimensional electron gas on cleaved GaAs}, volume={56}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103121}, DOI={10.1063/1.103121}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pfeiffer, Loren and West, K. W. and Stormer, H. L. and Eisenstein, J. P. and Baldwin, K. W. and Gershoni, D. and Spector, J.}, year={1990}, month=apr, pages={1697–1699} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        6
      ]
    ],
    "date-time": "2025-06-06T09:08:11Z",
    "timestamp": 1749200891177
  },
  "reference-count": 11,
  "publisher": "AIP Publishing",
  "issue": "17",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1990,
        4,
        23
      ]
    ]
  },
  "abstract": "<jats:p>We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in\u2008situ cleave exposes a fresh (110)\u2009GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1\u00d7105 cm2/V\u2009s are measured in the 2DEG at the cleaved interface.</jats:p>",
  "DOI": "10.1063/1.103121",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:51:12Z",
    "timestamp": 1027687872000
  },
  "page": "1697-1699",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 348,
  "title": "Formation of a high quality two-dimensional electron gas on cleaved GaAs",
  "prefix": "10.1063",
  "volume": "56",
  "author": [
    {
      "given": "Loren",
      "family": "Pfeiffer",
      "sequence": "first",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "K. W.",
      "family": "West",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "H. L.",
      "family": "Stormer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "J. P.",
      "family": "Eisenstein",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "K. W.",
      "family": "Baldwin",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Gershoni",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "J.",
      "family": "Spector",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, Murray Hill, New Jersey 07974"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020300561501600_r1"
    },
    {
      "key": "2024020300561501600_r2"
    },
    {
      "key": "2024020300561501600_r3",
      "first-page": "1880",
      "volume": "55",
      "year": "1989",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020300561501600_r4"
    },
    {
      "key": "2024020300561501600_r5",
      "doi-asserted-by": "crossref",
      "first-page": "630",
      "DOI": "10.1116/1.582567",
      "volume": "1",
      "year": "1983",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020300561501600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "391",
      "DOI": "10.1557/PROC-46-391",
      "volume": "46",
      "year": "1985",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020300561501600_r7",
      "doi-asserted-by": "crossref",
      "first-page": "670",
      "DOI": "10.1063/1.98329",
      "volume": "51",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020300561501600_r8",
      "doi-asserted-by": "crossref",
      "first-page": "221",
      "DOI": "10.1016/0022-0248(87)90394-0",
      "volume": "81",
      "year": "1987",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020300561501600_r9"
    },
    {
      "key": "2024020300561501600_r10"
    },
    {
      "key": "2024020300561501600_r11",
      "doi-asserted-by": "crossref",
      "first-page": "6487",
      "DOI": "10.1103/PhysRevB.27.6487",
      "volume": "27",
      "year": "1983",
      "journal-title": "Phys. Rev. B"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/56/17/1697/18476366/1697_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/56/17/1697/18476366/1697_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T00:56:24Z",
    "timestamp": 1706921784000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/56/17/1697/56897/Formation-of-a-high-quality-two-dimensional"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1990,
        4,
        23
      ]
    ]
  },
  "references-count": 11,
  "journal-issue": {
    "issue": "17",
    "published-print": {
      "date-parts": [
        [
          1990,
          4,
          23
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.103121",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1990,
        4,
        23
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1990,
        4,
        23
      ]
    ]
  }
}