DOI: 10.1063/1.103120. Optical and electronic properties of doped silicon from 0.1 to 2 THz

Optical and electronic properties of doped silicon from 0.1 to 2 THz

10.1063/1.103120

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N- and P-type, 1 Ω cm silicon from 0.1 to 2 THz. These results give the corresponding frequency-dependent complex conductance over the widest frequency range to date. The data provide a complete view on the dynamics of both electrons and holes and are well fit by the simple Drude relationship.

Bibliography

van Exter, M., & Grischkowsky, D. (1990). Optical and electronic properties of doped silicon from 0.1 to 2 THz. Applied Physics Letters, 56(17), 1694â1696.

Authors 2

Martin van Exter (first)
D. Grischkowsky (additional)

References 14 Referenced 262

10.1103/PhysRev.106.882 / Phys. Rev. (1957)
10.1063/1.1655744 / J. Appl. Phys. (1968)
10.1103/PhysRevLett.35.1359 / Phys. Rev. Lett. (1975)
10.1016/0020-0891(75)90026-3 / Infrared Phys. (1975)
{'key': '2024020300560463400_r5'}
10.1063/1.332452 / J. Appl. Phys. (1983)
10.1063/1.341325 / J. Appl. Phys. (1988)
10.1063/1.101901 / Appl. Phys. Lett. (1989)
10.1364/OL.14.001128 / Opt. Lett. (1989)
10.1364/AO.12.000398 / Appl. Opt. (1973)
10.1016/0038-1101(67)90009-3 / Solid-State Electron. (1967)
{'key': '2024020300560463400_r12'}
10.1103/PhysRev.104.637 / Phys. Rev. (1956)
10.1016/0038-1101(77)90054-5 / Solid-State Electron (1977)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:02 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 7:56 p.m.)
Indexed	3 weeks, 5 days ago (Aug. 7, 2025, 4:32 p.m.)
Issued	35 years, 4 months ago (April 23, 1990)
Published	35 years, 4 months ago (April 23, 1990)
Published Print	35 years, 4 months ago (April 23, 1990)

Funders 0

None

BibTeX

@article{van_Exter_1990, title={Optical and electronic properties of doped silicon from 0.1 to 2 THz}, volume={56}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103120}, DOI={10.1063/1.103120}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={van Exter, Martin and Grischkowsky, D.}, year={1990}, month=apr, pages={1694–1696} }

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