DOI: 10.1063/1.103100. Transient diffusion of low-concentration B in Si due to 29Si implantation damage

Transient diffusion of low-concentration B in Si due to 29Si implantation damage

10.1063/1.103100

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The effects of implantation damage on B diffusion are analyzed through the use of 29Si implants. Implant doses of 29Si ranging from 1×1012/cm2 to 1×1014/cm2 were used to create controlled amounts of damage. Temperatures ranging from 800 to 1000 °C were used to anneal the implant damage. For all anneal temperatures, the peak B concentration was well below the intrinsic electron concentration. Even for 29Si doses as low as 1×1012/cm2 significantly enhanced B diffusion was observed. The largest enhancement in B diffusion was observed for the highest 29Si implant dose and lowest anneal temperature. The kinetics of damage annealing determine the transient enhancement in the B profile. These results have important implications for the formation of shallow junctions using ion implantation.

Bibliography

Packan, P. A., & Plummer, J. D. (1990). Transient diffusion of low-concentration B in Si due to 29Si implantation damage. Applied Physics Letters, 56(18), 1787â1789.

Authors 2

P. A. Packan (first)
J. D. Plummer (additional)

References 16 Referenced 79

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{'key': '2024020300553050000_r15'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 7:55 p.m.)
Indexed	4 months, 2 weeks ago (April 19, 2025, 1:07 a.m.)
Issued	35 years, 4 months ago (April 30, 1990)
Published	35 years, 4 months ago (April 30, 1990)
Published Print	35 years, 4 months ago (April 30, 1990)

Funders 0

None

BibTeX

@article{Packan_1990, title={Transient diffusion of low-concentration B in Si due to 29Si implantation damage}, volume={56}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.103100}, DOI={10.1063/1.103100}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Packan, P. A. and Plummer, J. D.}, year={1990}, month=apr, pages={1787–1789} }

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