DOI: 10.1063/1.102881. Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffraction

Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffraction

10.1063/1.102881

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Microscopic distribution of growth rates on mesa-etched GaAs(001) wafers was measured in real time during molecular beam epitaxy growth by scanning microprobe reflection high-energy electron diffraction. It has been observed that the growth rate on the GaAs(001) surface near the edge of (111)A surfaces becomes larger. The exponential variation of the growth rate as a function of the distance from the edge reflects surface diffusion of Ga atoms. The diffusion length on the (001) surface is estimated to be about 1 μm at 560 °C. The relatively larger diffusion length suggests that the incorporation rate of migrating Ga atoms by steps is much smaller than unity.

Bibliography

Hata, M., Isu, T., Watanabe, A., & Katayama, Y. (1990). Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffraction. Applied Physics Letters, 56(25), 2542â2544.

Authors 4

M. Hata (first)
T. Isu (additional)
A. Watanabe (additional)
Y. Katayama (additional)

References 6 Referenced 66

10.1063/1.89373 / Appl. Phys. Lett. (1977)
10.1007/BF00617180 / Appl. Phys. A (1983)
10.1063/1.96281 / Appl. Phys. Lett. (1985)
10.1063/1.101693 / Appl. Phys. Lett. (1989)
10.1143/JJAP.27.L2259 / Jpn. J. Appl. Phys. (1988)
10.1063/1.101304 / Appl. Phys. Lett. (1989)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 8:09 p.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 3:17 p.m.)
Issued	35 years, 2 months ago (June 18, 1990)
Published	35 years, 2 months ago (June 18, 1990)
Published Print	35 years, 2 months ago (June 18, 1990)

Funders 0

None

BibTeX

@article{Hata_1990, title={Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffraction}, volume={56}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.102881}, DOI={10.1063/1.102881}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hata, M. and Isu, T. and Watanabe, A. and Katayama, Y.}, year={1990}, month=jun, pages={2542–2544} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        7,
        5
      ]
    ],
    "date-time": "2024-07-05T19:17:45Z",
    "timestamp": 1720207065929
  },
  "reference-count": 6,
  "publisher": "AIP Publishing",
  "issue": "25",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1990,
        6,
        18
      ]
    ]
  },
  "abstract": "<jats:p>Microscopic distribution of growth rates on mesa-etched GaAs(001) wafers was measured in real time during molecular beam epitaxy growth by scanning microprobe reflection high-energy electron diffraction. It has been observed that the growth rate on the GaAs(001) surface near the edge of (111)A surfaces becomes larger. The exponential variation of the growth rate as a function of the distance from the edge reflects surface diffusion of Ga atoms. The diffusion length on the (001) surface is estimated to be about 1 \u03bcm at 560 \u00b0C. The relatively larger diffusion length suggests that the incorporation rate of migrating Ga atoms by steps is much smaller than unity.</jats:p>",
  "DOI": "10.1063/1.102881",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:51:12Z",
    "timestamp": 1027687872000
  },
  "page": "2542-2544",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 66,
  "title": "Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffraction",
  "prefix": "10.1063",
  "volume": "56",
  "author": [
    {
      "given": "M.",
      "family": "Hata",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Optoelectronics Technology Research Laboratory, 5-5 Tohkodai Tsukuba, Ibaraki 300-26, Japan"
        }
      ]
    },
    {
      "given": "T.",
      "family": "Isu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Optoelectronics Technology Research Laboratory, 5-5 Tohkodai Tsukuba, Ibaraki 300-26, Japan"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Watanabe",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Optoelectronics Technology Research Laboratory, 5-5 Tohkodai Tsukuba, Ibaraki 300-26, Japan"
        }
      ]
    },
    {
      "given": "Y.",
      "family": "Katayama",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Optoelectronics Technology Research Laboratory, 5-5 Tohkodai Tsukuba, Ibaraki 300-26, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020301091223500_r1",
      "doi-asserted-by": "crossref",
      "first-page": "293",
      "DOI": "10.1063/1.89373",
      "volume": "30",
      "year": "1977",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301091223500_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1007/BF00617180",
      "volume": "31",
      "year": "1983",
      "journal-title": "Appl. Phys. A"
    },
    {
      "key": "2024020301091223500_r3",
      "doi-asserted-by": "crossref",
      "first-page": "100",
      "DOI": "10.1063/1.96281",
      "volume": "47",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301091223500_r4",
      "doi-asserted-by": "crossref",
      "first-page": "972",
      "DOI": "10.1063/1.101693",
      "volume": "55",
      "year": "1989",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020301091223500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "L2259",
      "DOI": "10.1143/JJAP.27.L2259",
      "volume": "27",
      "year": "1988",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020301091223500_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1690",
      "DOI": "10.1063/1.101304",
      "volume": "54",
      "year": "1989",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/56/25/2542/18477282/2542_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/56/25/2542/18477282/2542_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T01:09:20Z",
    "timestamp": 1706922560000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/56/25/2542/526075/Real-time-observation-of-molecular-beam-epitaxy"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1990,
        6,
        18
      ]
    ]
  },
  "references-count": 6,
  "journal-issue": {
    "issue": "25",
    "published-print": {
      "date-parts": [
        [
          1990,
          6,
          18
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.102881",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1990,
        6,
        18
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1990,
        6,
        18
      ]
    ]
  }
}