DOI: 10.1063/1.102841. Formation of silicon tips with &lt;1 nm radius

Formation of silicon tips with &lt;1 nm radius

10.1063/1.102841

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-μm-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.

Bibliography

Marcus, R. B., Ravi, T. S., Gmitter, T., Chin, K., Liu, D., Orvis, W. J., Ciarlo, D. R., Hunt, C. E., & Trujillo, J. (1990). Formation of silicon tips with <1 nm radius. Applied Physics Letters, 56(3), 236â238.

Authors 9

R. B. Marcus (first)
T. S. Ravi (additional)
T. Gmitter (additional)
K. Chin (additional)
D. Liu (additional)
W. J. Orvis (additional)
D. R. Ciarlo (additional)
C. E. Hunt (additional)
J. Trujillo (additional)

References 21 Referenced 233

{'key': '2024020300325159400_r1', 'first-page': '1585', 'volume': '40', 'year': '1976', 'journal-title': 'Izvestiya Akad. Nauk SSSR.'} / Izvestiya Akad. Nauk SSSR. (1976)
10.1016/0378-5963(79)90031-X / Appl. Surf. Sci. (1979)
{'key': '2024020300325159400_r3', 'first-page': '172', 'volume': '85', 'year': '1986', 'journal-title': 'Proc. IEDM'} / Proc. IEDM (1986)
{'key': '2024020300325159400_r4'}
{'key': '2024020300325159400_r5'}
{'key': '2024020300325159400_r6'}
{'key': '2024020300325159400_r7'}
{'key': '2024020300325159400_r8'}
{'key': '2024020300325159400_r9'}
{'key': '2024020300325159400_r10'}
{'key': '2024020300325159400_r11'}
{'key': '2024020300325159400_r12'}
{'key': '2024020300325159400_r13'}
10.1149/1.2124118 / J. Electrochem. Soc. (1982)
10.1143/JJAP.22.L514 / Jpn. J. Appl. Phys. (1983)
{'key': '2024020300325159400_r16'}
{'key': '2024020300325159400_r17', 'first-page': '1008', 'volume': 'ED-34', 'year': '1987', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1987)
{'key': '2024020300325159400_r18', 'first-page': '1681', 'volume': 'ED-34', 'year': '1987', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1987)
{'key': '2024020300325159400_r19', 'first-page': '25', 'volume': 'ED-35', 'year': '1988', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1988)
{'key': '2024020300325159400_r20'}
10.1149/1.2100485 / J. Electrochem. Soc. (1987)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 7:33 p.m.)
Indexed	2 months, 2 weeks ago (June 17, 2025, 5:46 a.m.)
Issued	35 years, 7 months ago (Jan. 15, 1990)
Published	35 years, 7 months ago (Jan. 15, 1990)
Published Print	35 years, 7 months ago (Jan. 15, 1990)

Funders 0

None

BibTeX

@article{Marcus_1990, title={Formation of silicon tips with &lt;1 nm radius}, volume={56}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.102841}, DOI={10.1063/1.102841}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Marcus, R. B. and Ravi, T. S. and Gmitter, T. and Chin, K. and Liu, D. and Orvis, W. J. and Ciarlo, D. R. and Hunt, C. E. and Trujillo, J.}, year={1990}, month=jan, pages={236–238} }

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