Abstract
We have studied the luminescence of short-period Si/Ge superlattices of varying composition grown on a Si1−xGex alloy buffer layer. X-ray diffraction and Rutherford backscattering were used to analyze the composition of the samples. Luminescence bands at 1.5 and 1.6 μm originate from the superlattice, as is indicated by etching experiments. A strong change in luminescence intensity is observed as the composition and strain of the superlattice vary.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:05 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 7:34 p.m.) |
Indexed | 1 month, 1 week ago (July 27, 2025, 3:51 a.m.) |
Issued | 35 years, 7 months ago (Jan. 22, 1990) |
Published | 35 years, 7 months ago (Jan. 22, 1990) |
Published Print | 35 years, 7 months ago (Jan. 22, 1990) |
@article{Montie_1990, title={Photoluminescence from Si/Ge superlattices}, volume={56}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.102802}, DOI={10.1063/1.102802}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Montie, E. A. and van de Walle, G. F. A. and Gravesteijn, D. J. and van Gorkum, A. A. and Bulle-Lieuwma, C. W. T.}, year={1990}, month=jan, pages={340–342} }