DOI: 10.1063/1.102735. Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser

Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser

10.1063/1.102735

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A 6Hα-SiC crystal sample, which has a surface amorphous layer resulting from a high-dose Ga implantation, was heated using a pulsed excimer laser at several energy fluences. At an energy fluence of 1.66 J/cm2, the in situ reflectivity measurement of the surface during laser processing indicates that melting of the SiC surface has occurred. Rutherford backscattering and channeling analysis shows that the molten amorphous SiC recrystallizes using the substrate as a seed, and that the recrystallized layer has good crystal quality. Secondary-ion mass spectrometry measurements indicate that the melting, resulting from the excimer laser pulse, results in significant redistribution of the implanted Ga. This result, the first reported for SiC, suggests that the pulsed ultraviolet process can anneal the implantation damage through a melt recrystallization process, and thus could be used to dope SiC through a gas phase adsorption process.

Bibliography

Chou, S. Y., Chang, Y., Weiner, K. H., Sigmon, T. W., & Parsons, J. D. (1990). Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser. Applied Physics Letters, 56(6), 530â532.

Authors 5

S. Y. Chou (first)
Y. Chang (additional)
K. H. Weiner (additional)
T. W. Sigmon (additional)
J. D. Parsons (additional)

References 5 Referenced 33

{'key': '2024020300383863500_r1'}
{'key': '2024020300383863500_r2', 'first-page': '132', 'volume': '7', 'year': '1976', 'journal-title': 'Diamond Res. (Suppl. Ind. Diamond Rev.)'} / Diamond Res. (Suppl. Ind. Diamond Rev.) (1976)
{'key': '2024020300383863500_r3'}
{'key': '2024020300383863500_r4'}
{'key': '2024020300383863500_r5'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:02 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 7:38 p.m.)
Indexed	4 weeks, 2 days ago (Aug. 6, 2025, 8:43 a.m.)
Issued	35 years, 7 months ago (Feb. 5, 1990)
Published	35 years, 7 months ago (Feb. 5, 1990)
Published Print	35 years, 7 months ago (Feb. 5, 1990)

Funders 0

None

BibTeX

@article{Chou_1990, title={Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser}, volume={56}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.102735}, DOI={10.1063/1.102735}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chou, S. Y. and Chang, Y. and Weiner, K. H. and Sigmon, T. W. and Parsons, J. D.}, year={1990}, month=feb, pages={530–532} }

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