Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

A near-field capacitance microscope has been demonstrated on a 25 nm scale. A resonant circuit provides the means for sensing the capacitance variations between a sub-100-nm tip and surface with a sensitivity of 1×10−19 F in a 1 kHz bandwidth. Feedback control is used to scan the tip at constant gap across a sample, providing a means of noncontact surface profiling. Images of conducting and nonconducting structures are presented.

Bibliography

Williams, C. C., Hough, W. P., & Rishton, S. A. (1989). Scanning capacitance microscopy on a 25 nm scale. Applied Physics Letters, 55(2), 203–205.

Authors 3
  1. C. C. Williams (first)
  2. W. P. Hough (additional)
  3. S. A. Rishton (additional)
References 11 Referenced 187
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Dates
Type When
Created 23 years ago (July 26, 2002, 5:05 a.m.)
Deposited 1 year, 6 months ago (Feb. 2, 2024, 1:52 p.m.)
Indexed 4 months ago (April 21, 2025, 12:25 a.m.)
Issued 36 years, 1 month ago (July 10, 1989)
Published 36 years, 1 month ago (July 10, 1989)
Published Print 36 years, 1 month ago (July 10, 1989)
Funders 0

None

@article{Williams_1989, title={Scanning capacitance microscopy on a 25 nm scale}, volume={55}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.102096}, DOI={10.1063/1.102096}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Williams, C. C. and Hough, W. P. and Rishton, S. A.}, year={1989}, month=jul, pages={203–205} }