Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

A two-dimensional electron gas is created on the sidewalls of V grooves etched into a GaAs substrate, using the regrowth by liquid phase epitaxy of an n-AlGaAs modulation-doping layer. The two-dimensional electron gas is characterized by magnetotransport measurements. The dependence on the magnetic field orientation of the Shubnikov–de Haas oscillations shows unambiguously that the two-dimensional electron gas is on the sidewalls, not on the top of the mesas or the bottom of the grooves.

Bibliography

Frei, M. R., & Tsui, D. C. (1989). Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth. Applied Physics Letters, 55(23), 2432–2434.

Authors 2
  1. M. R. Frei (first)
  2. D. C. Tsui (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited 1 year, 7 months ago (Feb. 2, 2024, 7:26 p.m.)
Indexed 1 year, 7 months ago (Feb. 3, 2024, 12:24 a.m.)
Issued 35 years, 9 months ago (Dec. 4, 1989)
Published 35 years, 9 months ago (Dec. 4, 1989)
Published Print 35 years, 9 months ago (Dec. 4, 1989)
Funders 0

None

@article{Frei_1989, title={Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth}, volume={55}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101997}, DOI={10.1063/1.101997}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Frei, M. R. and Tsui, D. C.}, year={1989}, month=dec, pages={2432–2434} }