Abstract
A two-dimensional electron gas is created on the sidewalls of V grooves etched into a GaAs substrate, using the regrowth by liquid phase epitaxy of an n-AlGaAs modulation-doping layer. The two-dimensional electron gas is characterized by magnetotransport measurements. The dependence on the magnetic field orientation of the Shubnikov–de Haas oscillations shows unambiguously that the two-dimensional electron gas is on the sidewalls, not on the top of the mesas or the bottom of the grooves.
References
13
Referenced
10
10.1103/PhysRevB.39.8556
/ Phys. Rev. B (1989)10.1063/1.98621
/ Appl. Phys. Lett. (1987)10.1143/JJAP.19.L735
/ Jpn. J. Appl. Phys. (1980)10.1063/1.97232
/ Appl. Phys. Lett. (1986)10.1063/1.96276
/ Appl. Phys. Lett. (1985)10.1049/el:19890282
/ Electron. Lett. (1989)10.1063/1.1663151
/ J. Appl. Phys. (1974)10.1063/1.101114
/ Appl. Phys. Lett. (1989)10.1063/1.91040
/ Appl. Phys. Lett. (1979)10.1016/0038-1098(84)90280-1
/ Solid State Commun. (1984)10.1016/0146-3535(86)90009-2
/ Prog. Cryst. Growth Charact. (1986)10.1063/1.89461
/ Appl. Phys. Lett. (1977)10.1007/BF02655216
/ J. Electron. Mater. (1980)
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:51 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 7:26 p.m.) |
Indexed | 1 year, 7 months ago (Feb. 3, 2024, 12:24 a.m.) |
Issued | 35 years, 9 months ago (Dec. 4, 1989) |
Published | 35 years, 9 months ago (Dec. 4, 1989) |
Published Print | 35 years, 9 months ago (Dec. 4, 1989) |
@article{Frei_1989, title={Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth}, volume={55}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101997}, DOI={10.1063/1.101997}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Frei, M. R. and Tsui, D. C.}, year={1989}, month=dec, pages={2432–2434} }