Abstract
The 842-nm diffraction-limited emission from an injection-locked laser diode array was frequency doubled using a monolithic spherical-mirror KNbO3 crystal cavity. Maximum unidirectional external 421 nm power of 24 mW was generated with 167 mW of pump power. Maximum total internal second-harmonic power and conversion efficiency of 64 mW and 45% were obtained. Effects of heating in the crystal are described.
References
6
Referenced
59
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:05 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 6:51 p.m.) |
Indexed | 1 year, 7 months ago (Feb. 4, 2024, 11:40 a.m.) |
Issued | 36 years, 1 month ago (July 17, 1989) |
Published | 36 years, 1 month ago (July 17, 1989) |
Published Print | 36 years, 1 month ago (July 17, 1989) |
@article{Goldberg_1989, title={Efficient generation at 421 nm by resonantly enhanced doubling of GaAlAs laser diode array emission}, volume={55}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101912}, DOI={10.1063/1.101912}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Goldberg, Lew and Chun, Myung K.}, year={1989}, month=jul, pages={218–220} }