DOI: 10.1063/1.101888. Characteristics of rare-earth element erbium implanted in silicon

Characteristics of rare-earth element erbium implanted in silicon

10.1063/1.101888

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Rare-earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related to the weakly crystal field split spin-orbit levels 4I13/2→4I15/2 of Er 3+ (4f 11) at different lattice sites having different symmetries were observed.

Bibliography

Tang, Y. S., Heasman, K. C., Gillin, W. P., & Sealy, B. J. (1989). Characteristics of rare-earth element erbium implanted in silicon. Applied Physics Letters, 55(5), 432â433.

Authors 4

Y. S. Tang (first)
K. C. Heasman (additional)
W. P. Gillin (additional)
B. J. Sealy (additional)

References 5 Referenced 91

10.1063/1.94190 / Appl. Phys. Lett. (1983)
10.1063/1.95639 / Appl. Phys. Lett. (1985)
10.1063/1.338353 / J. Appl. Phys. (1987)
10.1063/1.336619 / J. Appl. Phys. (1986)
10.1063/1.98260 / Appl. Phys. Lett. (1987)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 6:57 p.m.)
Indexed	2 months, 2 weeks ago (June 16, 2025, 8:07 a.m.)
Issued	36 years, 1 month ago (July 31, 1989)
Published	36 years, 1 month ago (July 31, 1989)
Published Print	36 years, 1 month ago (July 31, 1989)

Funders 0

None

BibTeX

@article{Tang_1989, title={Characteristics of rare-earth element erbium implanted in silicon}, volume={55}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101888}, DOI={10.1063/1.101888}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tang, Y. S. and Heasman, K. C. and Gillin, W. P. and Sealy, B. J.}, year={1989}, month=jul, pages={432–433} }

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