DOI: 10.1063/1.101693. Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures

Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures

10.1063/1.101693

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Thickness variations in GaAs/AlGaAs quantum wells grown on patterned substrates by molecular beam epitaxy have been analyzed by spatially and spectrally resolved low-temperature cathodoluminescence. For the lower and upper (100) facets joined by an angled (311)A facet, relative increases in quantum well thicknesses up to ≂6% and 20% are observed, respectively, in the vicinity of the intersection of the facets. Following an exponential behavior, the Ga adatom migration length is found to be in the range of 1–2 μm on both the lower and upper (100) facets and is independent of quantum well thickness. This migration length is orders of magnitude greater than previously reported for Ga adatoms during molecular beam epitaxy growth.

Bibliography

Nilsson, S., Van Gieson, E., Arent, D. J., Meier, H. P., Walter, W., & Forster, T. (1989). Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures. Applied Physics Letters, 55(10), 972â974.

Authors 6

S. Nilsson (first)
E. Van Gieson (additional)
D. J. Arent (additional)
H. P. Meier (additional)
W. Walter (additional)
T. Forster (additional)

References 14 Referenced 62

10.1063/1.99379 / Appl. Phys. Lett. (1988)
10.1063/1.100994 / Appl. Phys. Lett. (1989)
10.1063/1.100943 / Appl. Phys. Lett. (1989)
10.1063/1.89373 / Appl. Phys. Lett. (1977)
10.1063/1.95326 / Appl. Phys. Lett. (1984)
10.1063/1.98196 / Appl. Phys. Lett. (1987)
{'key': '2024020300025537600_r7', 'first-page': '692', 'volume': '6', 'year': '1988', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1988)
10.1063/1.1660019 / J. Appl. Phys. (1971)
{'key': '2024020300025537600_r9'}
10.1103/PhysRevB.24.5693 / Phys. Rev. B (1981)
10.1103/PhysRevLett.62.1784 / Phys. Rev. Lett. (1989)
10.1080/01611598808241266 / CRC Crit. Rev. Solid State Mater. Sci. (1988)
10.1063/1.332317 / J. Appl. Phys. (1983)
{'key': '2024020300025537600_r14'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 7:03 p.m.)
Indexed	5 months, 1 week ago (March 24, 2025, 2:31 a.m.)
Issued	36 years ago (Sept. 4, 1989)
Published	36 years ago (Sept. 4, 1989)
Published Print	36 years ago (Sept. 4, 1989)

Funders 0

None

BibTeX

@article{Nilsson_1989, title={Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures}, volume={55}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101693}, DOI={10.1063/1.101693}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nilsson, S. and Van Gieson, E. and Arent, D. J. and Meier, H. P. and Walter, W. and Forster, T.}, year={1989}, month=sep, pages={972–974} }

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