DOI: 10.1063/1.101656. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

10.1063/1.101656

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs lattice-matched heterointerfaces were also examined. For the Ga0.5In0.5P/GaAs heterostructure, we show that the recombination velocity at a Ga0.5In0.5P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 μs have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as T1.59, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.

Bibliography

Olson, J. M., Ahrenkiel, R. K., Dunlavy, D. J., Keyes, B., & Kibbler, A. E. (1989). Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces. Applied Physics Letters, 55(12), 1208â1210.

Authors 5

J. M. Olson (first)
R. K. Ahrenkiel (additional)
D. J. Dunlavy (additional)
Brian Keyes (additional)
A. E. Kibbler (additional)

References 21 Referenced 249

10.1063/1.98415 / Appl. Phys. Lett. (1987)
10.1063/1.100065 / Appl. Phys. Lett. (1988)
10.1063/1.90422 / Appl. Phys. Lett. (1978)
{'key': '2024020300042801800_r4', 'first-page': '76', 'volume': '36', 'year': '1981', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1981)
10.1149/1.2096281 / J. Electrochem. Soc. (1988)
10.1063/1.100005 / Appl. Phys. Lett. (1988)
10.1063/1.97909 / Appl. Phys. Lett. (1987)
10.1063/1.341298 / J. Appl. Phys. (1988)
10.1063/1.90477 / Appl. Phys. Lett. (1978)
10.1063/1.92935 / Appl. Phys. Lett. (1982)
{'key': '2024020300042801800_r11', 'first-page': '175', 'volume': 'EDL-6', 'year': '1985', 'journal-title': 'IEEE Electron Devices'} / IEEE Electron Devices (1985)
{'key': '2024020300042801800_r12'}
10.1049/el:19850658 / Electron. Lett. (1985)
10.1016/0379-6787(88)90086-5 / Solar Cells (1988)
{'key': '2024020300042801800_r15', 'first-page': '1065', 'volume': '69', 'year': '1986', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1986)
10.1063/1.322626 / J. Appl. Phys. (1976)
{'key': '2024020300042801800_r17'}
10.1016/0022-0248(88)90082-6 / J. Cryst. Growth (1988)
{'key': '2024020300042801800_r19'}
10.1116/1.575848 / J. Vac. Sci. Technol. A (1989)
{'key': '2024020300042801800_r21'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 7:04 p.m.)
Indexed	3 months, 2 weeks ago (May 10, 2025, 3:26 a.m.)
Issued	35 years, 11 months ago (Sept. 18, 1989)
Published	35 years, 11 months ago (Sept. 18, 1989)
Published Print	35 years, 11 months ago (Sept. 18, 1989)

Funders 0

None

BibTeX

@article{Olson_1989, title={Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces}, volume={55}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101656}, DOI={10.1063/1.101656}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Olson, J. M. and Ahrenkiel, R. K. and Dunlavy, D. J. and Keyes, Brian and Kibbler, A. E.}, year={1989}, month=sep, pages={1208–1210} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        5,
        10
      ]
    ],
    "date-time": "2025-05-10T07:26:01Z",
    "timestamp": 1746861961764
  },
  "reference-count": 21,
  "publisher": "AIP Publishing",
  "issue": "12",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1989,
        9,
        18
      ]
    ]
  },
  "abstract": "<jats:p>Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs lattice-matched heterointerfaces were also examined. For the Ga0.5In0.5P/GaAs heterostructure, we show that the recombination velocity at a Ga0.5In0.5P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 \u03bcs have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as T1.59, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.</jats:p>",
  "DOI": "10.1063/1.101656",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:05:16Z",
    "timestamp": 1027688716000
  },
  "page": "1208-1210",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 249,
  "title": "Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces",
  "prefix": "10.1063",
  "volume": "55",
  "author": [
    {
      "given": "J. M.",
      "family": "Olson",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Solar Energy Research Institute, Golden, Colorado 80401"
        }
      ]
    },
    {
      "given": "R. K.",
      "family": "Ahrenkiel",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Solar Energy Research Institute, Golden, Colorado 80401"
        }
      ]
    },
    {
      "given": "D. J.",
      "family": "Dunlavy",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Solar Energy Research Institute, Golden, Colorado 80401"
        }
      ]
    },
    {
      "given": "Brian",
      "family": "Keyes",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Solar Energy Research Institute, Golden, Colorado 80401"
        }
      ]
    },
    {
      "given": "A. E.",
      "family": "Kibbler",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Solar Energy Research Institute, Golden, Colorado 80401"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020300042801800_r1",
      "doi-asserted-by": "crossref",
      "first-page": "439",
      "DOI": "10.1063/1.98415",
      "volume": "51",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020300042801800_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1059",
      "DOI": "10.1063/1.100065",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020300042801800_r3",
      "doi-asserted-by": "crossref",
      "first-page": "521",
      "DOI": "10.1063/1.90422",
      "volume": "33",
      "year": "1978",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020300042801800_r4",
      "first-page": "76",
      "volume": "36",
      "year": "1981",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020300042801800_r5",
      "doi-asserted-by": "crossref",
      "first-page": "2391",
      "DOI": "10.1149/1.2096281",
      "volume": "135",
      "year": "1988",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020300042801800_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1308",
      "DOI": "10.1063/1.100005",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020300042801800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1197",
      "DOI": "10.1063/1.97909",
      "volume": "50",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020300042801800_r8",
      "doi-asserted-by": "crossref",
      "first-page": "4253",
      "DOI": "10.1063/1.341298",
      "volume": "64",
      "year": "1988",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020300042801800_r9",
      "doi-asserted-by": "crossref",
      "first-page": "606",
      "DOI": "10.1063/1.90477",
      "volume": "33",
      "year": "1978",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020300042801800_r10",
      "doi-asserted-by": "crossref",
      "first-page": "885",
      "DOI": "10.1063/1.92935",
      "volume": "40",
      "year": "1982",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020300042801800_r11",
      "first-page": "175",
      "volume": "EDL-6",
      "year": "1985",
      "journal-title": "IEEE Electron Devices"
    },
    {
      "key": "2024020300042801800_r12"
    },
    {
      "key": "2024020300042801800_r13",
      "doi-asserted-by": "crossref",
      "first-page": "931",
      "DOI": "10.1049/el:19850658",
      "volume": "21",
      "year": "1985",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2024020300042801800_r14",
      "doi-asserted-by": "crossref",
      "first-page": "339",
      "DOI": "10.1016/0379-6787(88)90086-5",
      "volume": "24",
      "year": "1988",
      "journal-title": "Solar Cells"
    },
    {
      "key": "2024020300042801800_r15",
      "first-page": "1065",
      "volume": "69",
      "year": "1986",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020300042801800_r16",
      "doi-asserted-by": "crossref",
      "first-page": "631",
      "DOI": "10.1063/1.322626",
      "volume": "47",
      "year": "1976",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020300042801800_r17"
    },
    {
      "key": "2024020300042801800_r18",
      "doi-asserted-by": "crossref",
      "first-page": "131",
      "DOI": "10.1016/0022-0248(88)90082-6",
      "volume": "89",
      "year": "1988",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020300042801800_r19"
    },
    {
      "key": "2024020300042801800_r20",
      "doi-asserted-by": "crossref",
      "first-page": "822",
      "DOI": "10.1116/1.575848",
      "volume": "7",
      "year": "1989",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020300042801800_r21"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/55/12/1208/18472773/1208_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/55/12/1208/18472773/1208_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T00:04:38Z",
    "timestamp": 1706918678000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/55/12/1208/56187/Ultralow-recombination-velocity-at-Ga0-5In0-5P"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1989,
        9,
        18
      ]
    ]
  },
  "references-count": 21,
  "journal-issue": {
    "issue": "12",
    "published-print": {
      "date-parts": [
        [
          1989,
          9,
          18
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.101656",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1989,
        9,
        18
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1989,
        9,
        18
      ]
    ]
  }
}