Abstract
Gold tracks of better than 98% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et3 P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 μΩ cm, comparable with bulk gold, were attained at a writing speed of 35 μm s−1 . The track profiles suggest that deposition is more rapid on the gold surface than on the SiO2 substrate.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:51 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 7:10 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 3, 2024, 3:17 a.m.) |
Issued | 35 years, 10 months ago (Oct. 2, 1989) |
Published | 35 years, 10 months ago (Oct. 2, 1989) |
Published Print | 35 years, 10 months ago (Oct. 2, 1989) |
@article{Jubber_1989, title={Laser writing of high-purity gold lines}, volume={55}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101585}, DOI={10.1063/1.101585}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jubber, M. and Wilson, J. I. B. and Davidson, J. L. and Fernie, P. A. and John, P.}, year={1989}, month=oct, pages={1477–1479} }