Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Gold tracks of better than 98% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et3 P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 μΩ cm, comparable with bulk gold, were attained at a writing speed of 35 μm s−1 . The track profiles suggest that deposition is more rapid on the gold surface than on the SiO2 substrate.

Bibliography

Jubber, M., Wilson, J. I. B., Davidson, J. L., Fernie, P. A., & John, P. (1989). Laser writing of high-purity gold lines. Applied Physics Letters, 55(14), 1477–1479.

Authors 5
  1. M. Jubber (first)
  2. J. I. B. Wilson (additional)
  3. J. L. Davidson (additional)
  4. P. A. Fernie (additional)
  5. P. John (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited 1 year, 6 months ago (Feb. 2, 2024, 7:10 p.m.)
Indexed 1 year, 6 months ago (Feb. 3, 2024, 3:17 a.m.)
Issued 35 years, 10 months ago (Oct. 2, 1989)
Published 35 years, 10 months ago (Oct. 2, 1989)
Published Print 35 years, 10 months ago (Oct. 2, 1989)
Funders 0

None

@article{Jubber_1989, title={Laser writing of high-purity gold lines}, volume={55}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101585}, DOI={10.1063/1.101585}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jubber, M. and Wilson, J. I. B. and Davidson, J. L. and Fernie, P. A. and John, P.}, year={1989}, month=oct, pages={1477–1479} }