DOI: 10.1063/1.101429. Novel characterization of implant damage in SiO2 by nuclear-deposited energy

Novel characterization of implant damage in SiO2 by nuclear-deposited energy

10.1063/1.101429

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Etching enhancement in through-implanted SiO2 has been characterized by nuclear-deposited energy independently of implant conditions. An empirical expression has been proposed to describe the etching rate for any implantation. The enhanced etching has been related to the Si-O vibrational frequency shift. Etching enhancement has been found to reflect the structural change in SiO2, and to be a good measure of degradation. The structural change of SiO2 stops and the etching rate reaches a maximum for an ion dose corresponding to nuclear-deposited energy larger than 3.4×1023 eV/cm3. This energy is equal to the total SiO bonding energy (3.8 eV) in a unit volume of SiO2.

Bibliography

Hiraiwa, A., Usui, H., & Yagi, K. (1989). Novel characterization of implant damage in SiO2 by nuclear-deposited energy. Applied Physics Letters, 54(12), 1106â1108.

Authors 3

A. Hiraiwa (first)
H. Usui (additional)
K. Yagi (additional)

References 12 Referenced 24

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{'key': '2024020223264325400_r3', 'first-page': '187', 'volume': '31', 'year': '1970', 'journal-title': 'RCA Rev.'} / RCA Rev. (1970)
10.1149/1.2404325 / J. Electrochem. Soc. (1972)
{'key': '2024020223264325400_r5'}
{'key': '2024020223264325400_r6'}
10.1063/1.1654480 / Appl. Phys. Lett. (1973)
{'key': '2024020223264325400_r8'}
{'key': '2024020223264325400_r9'}
10.1143/JJAP.21.1363 / Jpn. J. Appl. Phys. (1982)
10.1063/1.334142 / J. Appl. Phys. (1984)
10.1063/1.1655480 / Appl. Phys. Lett. (1974)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 6:32 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 9:45 a.m.)
Issued	36 years, 5 months ago (March 20, 1989)
Published	36 years, 5 months ago (March 20, 1989)
Published Print	36 years, 5 months ago (March 20, 1989)

Funders 0

None

BibTeX

@article{Hiraiwa_1989, title={Novel characterization of implant damage in SiO2 by nuclear-deposited energy}, volume={54}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101429}, DOI={10.1063/1.101429}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hiraiwa, A. and Usui, H. and Yagi, K.}, year={1989}, month=mar, pages={1106–1108} }

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