Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The passivating effects of the plasma-polymerized thiophene thin film on the intrinsic properties of n-GaAs surfaces have been investigated by means of scanning electron microscopy–electron beam induced current and capacitance-voltage techniques. Reduction of the surface recombination velocity and the surface barrier at the interface between polymer and GaAs has been reported. These results indicate that the Fermi level is no longer pinned at midgap, but is moved closer to the conduction band. We discuss a possible unpinning mechanism.

Bibliography

Rao, V. J., Manorama, V., & Bhoraskar, S. V. (1989). Passivation of pinned n-GaAs surfaces by a plasma-polymerized thin film. Applied Physics Letters, 54(18), 1799–1801.

Authors 3
  1. V. J. Rao (first)
  2. Vardhireddy Manorama (additional)
  3. S. V. Bhoraskar (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited 1 year, 6 months ago (Feb. 2, 2024, 6:37 p.m.)
Indexed 1 year, 6 months ago (Feb. 4, 2024, 11:23 a.m.)
Issued 36 years, 3 months ago (May 1, 1989)
Published 36 years, 3 months ago (May 1, 1989)
Published Print 36 years, 3 months ago (May 1, 1989)
Funders 0

None

@article{Rao_1989, title={Passivation of pinned n-GaAs surfaces by a plasma-polymerized thin film}, volume={54}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101268}, DOI={10.1063/1.101268}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rao, V. J. and Manorama, Vardhireddy and Bhoraskar, S. V.}, year={1989}, month=may, pages={1799–1801} }