DOI: 10.1063/1.101181. Optical studies of In<i>x</i>Ga1−<i>x</i>As/GaAs strained-layer quantum wells

Optical studies of InxGa1−xAs/GaAs strained-layer quantum wells

10.1063/1.101181

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Intense single-peak photoluminescences of free-exciton origin were observed in InxGa1−x As/GaAs strained-layer quantum wells with x ranging from 0.09 to 0.20. Band lineups in these strained-layer heterostructures were determined by the dependence of luminescence energy on the well thickness. The heterojunction discontinuity in the heavy hole valence bands was found to be about 30% of the gap difference and independent of x. Exciton-phonon coupling was determined by temperature-dependent absorption measurements and the coupling strength was found to be similar to that of unstrained GaAs/AlxGa1−x As quantum wells.

Bibliography

Huang, K. F., Tai, K., Chu, S. N. G., & Cho, A. Y. (1989). Optical studies of InxGa1âxAs/GaAs strained-layer quantum wells. Applied Physics Letters, 54(20), 2026â2028.

Authors 4

K. F. Huang (first)
K. Tai (additional)
S. N. G. Chu (additional)
A. Y. Cho (additional)

References 20 Referenced 50

{'key': '2024020223410278300_r1', 'first-page': '1187', 'volume': '27', 'year': '1974', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1974)
10.1063/1.330615 / J. Appl. Phys. (1982)
10.1063/1.96761 / Appl. Phys. Lett. (1986)
10.1063/1.94419 / Appl. Phys. Lett. (1983)
10.1103/PhysRevB.31.8298 / Phys. Rev. B (1985)
10.1116/1.583613 / J. Vac. Sci. Technol. B (1987)
10.1063/1.339299 / J. Appl. Phys. (1987)
10.1103/PhysRevB.38.3375 / Phys. Rev. B (1988)
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{'key': '2024020223410278300_r10', 'first-page': '10978', 'volume': '39', 'year': '1988', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1988)
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{'key': '2024020223410278300_r15'}
10.1063/1.93648 / Appl. Phys. Lett. (1982)
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10.1103/PhysRevB.34.2991 / Phys. Rev. B (1986)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 6:41 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 11:06 a.m.)
Issued	36 years, 3 months ago (May 15, 1989)
Published	36 years, 3 months ago (May 15, 1989)
Published Print	36 years, 3 months ago (May 15, 1989)

Funders 0

None

BibTeX

@article{Huang_1989, title={Optical studies of InxGa1−xAs/GaAs strained-layer quantum wells}, volume={54}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101181}, DOI={10.1063/1.101181}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang, K. F. and Tai, K. and Chu, S. N. G. and Cho, A. Y.}, year={1989}, month=may, pages={2026–2028} }

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