DOI: 10.1063/1.101174. Amphoteric native defects in semiconductors

Amphoteric native defects in semiconductors

10.1063/1.101174

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We show that a new concept of amphoteric native defects with strongly Fermi level dependent defect formation energy provides the basis for a unified explanation of a large variety of phenomena in semiconductors. Formation of Schottky barriers, particle irradiation induced compensation, doping-induced superlattice intermixing, and limits of free-carrier concentration find for the first time a common simple explanation.

Bibliography

Walukiewicz, W. (1989). Amphoteric native defects in semiconductors. Applied Physics Letters, 54(21), 2094â2096.

Authors 1

W. Walukiewicz (first)

References 21 Referenced 262

{'key': '2024020223405023100_r1'}
10.1116/1.583729 / J. Vac. Sci. Technol. B (1987)
10.1103/PhysRevB.37.4760 / Phys. Rev. B (1988)
10.1103/PhysRevLett.55.1327 / Phys. Rev. Lett. (1985)
10.1103/PhysRevB.33.7346 / Phys. Rev. B (1986)
{'key': '2024020223405023100_r6', 'first-page': '1357', 'volume': '6', 'year': '1988', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1988)
10.1116/1.584230 / J. Vac. Sci. Technol. B (1988)
10.1063/1.92942 / Appl. Phys. Lett. (1982)
{'key': '2024020223405023100_r9', 'first-page': '2623', 'volume': '23', 'year': '1984', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1984)
10.1063/1.98145 / Appl. Phys. Lett. (1987)
10.1063/1.95860 / Appl. Phys. Lett. (1985)
10.1063/1.97709 / Appl. Phys. Lett. (1987)
10.1063/1.330012 / J. Appl. Phys. (1982)
10.1063/1.338027 / J. Appl. Phys. (1987)
10.1016/0022-3697(63)90202-6 / J. Phys. Chem. Solids (1963)
10.1016/0038-1101(88)90137-2 / Solid-State Electron. (1988)
10.1063/1.96170 / Appl. Phys. Lett. (1985)
10.1143/JJAP.27.L707 / Jpn. J. Appl. Phys. (1988)
10.1103/PhysRevLett.60.361 / Phys. Rev. Lett. (1988)
10.1149/1.2403357 / J. Electrochem. Soc. (1973)
{'key': '2024020223405023100_r21', 'first-page': '641', 'volume': '13', 'year': '1974', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1974)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 6:41 p.m.)
Indexed	1 month ago (July 30, 2025, 9:54 a.m.)
Issued	36 years, 3 months ago (May 22, 1989)
Published	36 years, 3 months ago (May 22, 1989)
Published Print	36 years, 3 months ago (May 22, 1989)

Funders 0

None

BibTeX

@article{Walukiewicz_1989, title={Amphoteric native defects in semiconductors}, volume={54}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101174}, DOI={10.1063/1.101174}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Walukiewicz, W.}, year={1989}, month=may, pages={2094–2096} }

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