Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Measurements of the median time to failure (MTTF) and deviation in the time to electromigration-induced failure (DTTF) of Al alloy thin-film lines are reported. As the ratio of the linewidth to the grain size decreases, MTTF decreases to a minimum and then increases exponentially. DTTF continuously increases. We show that serial and parallel failure unit models can be used to explain the grain size and linewidth dependence of the MTTF and DTTF for interconnects. We further note that extrapolation to low cumulative failures based on serial failure models must be based on knowledge of the failure statistics of individual units.

Bibliography

Cho, J., & Thompson, C. V. (1989). Grain size dependence of electromigration-induced failures in narrow interconnects. Applied Physics Letters, 54(25), 2577–2579.

Authors 2
  1. J. Cho (first)
  2. C. V. Thompson (additional)
References 10 Referenced 193
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Dates
Type When
Created 23 years ago (July 26, 2002, 8:51 a.m.)
Deposited 1 year, 6 months ago (Feb. 2, 2024, 6:46 p.m.)
Indexed 5 days, 6 hours ago (Aug. 19, 2025, 7:02 a.m.)
Issued 36 years, 2 months ago (June 19, 1989)
Published 36 years, 2 months ago (June 19, 1989)
Published Print 36 years, 2 months ago (June 19, 1989)
Funders 0

None

@article{Cho_1989, title={Grain size dependence of electromigration-induced failures in narrow interconnects}, volume={54}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101054}, DOI={10.1063/1.101054}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cho, J. and Thompson, C. V.}, year={1989}, month=jun, pages={2577–2579} }