DOI: 10.1063/1.101014. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering

Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering

10.1063/1.101014

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The influence of growth temperature on the interfacial abruptness of strained Ge layers, a few monolayers thick, embedded in Si has been studied using Raman spectroscopy to identify the presence of GeGe and GeSi bonds and medium energy ion scattering to characterize the spatial extent of the layers. Atomically sharp interfaces are observed for growth temperatures just above the crystalline to amorphous transition range, with pseudomorphic growth found for growth temperatures &gt;∼250 °C. Asymmetric mixing of Ge into the Si capping layer occurs during growth at higher temperatures. Significantly less intermixing occurs on annealing after growth, pointing to the role of dynamical processes occurring at the growth front.

Bibliography

Iyer, S. S., Tsang, J. C., Copel, M. W., Pukite, P. R., & Tromp, R. M. (1989). Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering. Applied Physics Letters, 54(3), 219â221.

Authors 5

S. S. Iyer (first)
J. C. Tsang (additional)
M. W. Copel (additional)
P. R. Pukite (additional)
R. M. Tromp (additional)

References 13 Referenced 129

10.1103/PhysRevLett.58.729 / Phys. Rev. Lett. (1987)
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{'key': '2024020223144713100_r3', 'first-page': '1129', 'volume': '3–4', 'year': '1985', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1985)
10.1063/1.98558 / Appl. Phys. Lett. (1987)
{'key': '2024020223144713100_r5', 'first-page': '155', 'volume': '46', 'year': '1984', 'journal-title': 'Nucl. Instrum. Methods B'} / Nucl. Instrum. Methods B (1984)
10.1103/PhysRevB.37.2766 / Phys. Rev. B (1988)
{'key': '2024020223144713100_r7'}
10.1103/PhysRevB.32.5558 / Phys. Rev. B (1985)
10.1143/JJAP.26.666 / Jpn. J. Appl. Phys. (1987)
{'key': '2024020223144713100_r10', 'first-page': '2577', 'volume': '58', 'year': '1985', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1985)
10.1103/PhysRevB.37.1039 / Phys. Rev. B (1988)
{'key': '2024020223144713100_r12', 'first-page': '5608', 'volume': '31', 'year': '1981', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1981)
{'key': '2024020223144713100_r13'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 6:25 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 8:22 a.m.)
Issued	36 years, 7 months ago (Jan. 16, 1989)
Published	36 years, 7 months ago (Jan. 16, 1989)
Published Print	36 years, 7 months ago (Jan. 16, 1989)

Funders 0

None

BibTeX

@article{Iyer_1989, title={Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering}, volume={54}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101014}, DOI={10.1063/1.101014}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Iyer, S. S. and Tsang, J. C. and Copel, M. W. and Pukite, P. R. and Tromp, R. M.}, year={1989}, month=jan, pages={219–221} }

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