DOI: 10.1063/1.101002. Broadband 8–12 μm high-sensitivity GaAs quantum well infrared photodetector

Broadband 8–12 μm high-sensitivity GaAs quantum well infrared photodetector

10.1063/1.101002

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Broadband GaAs/AlxGa1−xAs quantum well infrared detectors grown by molecular beam epitaxy have been demonstrated which are sensitive over the λ=8–12 μm atmospheric window spectral region. These are the first high-detectivity bound state to extended state quantum well detectors which are peaked at λ=10 μm. The spectral bandwidth (Δν/ν) of these devices is three times larger than our earlier λ=8 μm device. The detectivity D* is background limited at T=50 K with D*=1×1010 cm (Hz)1/2 /W, and a noise equivalent temperature change of NEΔT=0.01 K.

Bibliography

Levine, B. F., Hasnain, G., Bethea, C. G., & Chand, N. (1989). Broadband 8â12 Î¼m high-sensitivity GaAs quantum well infrared photodetector. Applied Physics Letters, 54(26), 2704â2706.

Authors 4

B. F. Levine (first)
G. Hasnain (additional)
C. G. Bethea (additional)
Naresh Chand (additional)

References 21 Referenced 107

10.1063/1.341794 / J. Appl. Phys. (1988)
10.1063/1.99918 / Appl. Phys. Lett. (1988)
10.1063/1.101079 / Appl. Phys. Lett. (1989)
{'key': '2024020223493198500_r4', 'volume': '66', 'year': '1989', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1989)
{'key': '2024020223493198500_r5', 'first-page': '376', 'volume': '1', 'year': '1983', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1983)
10.1063/1.95343 / Appl. Phys. Lett. (1984)
10.1063/1.337085 / J. Appl. Phys. (1986)
10.1063/1.97928 / Appl. Phys. Lett. (1987)
{'key': '2024020223493198500_r9', 'first-page': '8029', 'volume': '49', 'year': '1989', 'journal-title': 'Phys. Rev. B.'} / Phys. Rev. B. (1989)
10.1049/el:19880504 / Electron Lett. (1988)
{'key': '2024020223493198500_r11'}
{'key': '2024020223493198500_r12'}
{'key': '2024020223493198500_r13'}
10.1016/0020-0891(77)90105-1 / Infrared Phys. (1977)
{'key': '2024020223493198500_r15'}
{'key': '2024020223493198500_r16'}
{'key': '2024020223493198500_r17'}
{'key': '2024020223493198500_r18'}
{'key': '2024020223493198500_r19'}
{'key': '2024020223493198500_r20', 'first-page': '855', 'volume': '24', 'year': '1985', 'journal-title': 'Opt. Eng.'} / Opt. Eng. (1985)
{'key': '2024020223493198500_r21', 'first-page': '981', 'volume': '26', 'year': '1987', 'journal-title': 'Opt. Eng.'} / Opt. Eng. (1987)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 5:05 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 1:49 p.m.)
Indexed	11 months, 3 weeks ago (Sept. 4, 2024, 5:42 a.m.)
Issued	36 years, 2 months ago (June 26, 1989)
Published	36 years, 2 months ago (June 26, 1989)
Published Print	36 years, 2 months ago (June 26, 1989)

Funders 0

None

BibTeX

@article{Levine_1989, title={Broadband 8–12 μm high-sensitivity GaAs quantum well infrared photodetector}, volume={54}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.101002}, DOI={10.1063/1.101002}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Levine, B. F. and Hasnain, G. and Bethea, C. G. and Chand, Naresh}, year={1989}, month=jun, pages={2704–2706} }

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