DOI: 10.1063/1.100828. Solid phase epitaxial regrowth of Si1−<i>x</i>Ge<i>x</i>/Si strained-layer structures amorphized by ion implantation

Solid phase epitaxial regrowth of Si1−xGex/Si strained-layer structures amorphized by ion implantation

10.1063/1.100828

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Strained-layer structures consisting of ∼30–35 nm Si1−xGex (x=0.16–0.29) and 33 nm Si deposited by molecular beam epitaxy on a (100)Si substrate have been amorphized by ion implantation at 40 K with 120 keV As+. Rutherford backscattering/channeling measurements using 2 MeV He+ ions have been used to measure the thickness of the amorphous layer and monitor the subsequent epitaxial regrowth occurring as a result of annealing at 560–600 °C. Angular scans across the {110} planar channels indicate that the initial crystallinity and strain was recovered for x=0.16; however, for x=0.29 crystal quality was greatly reduced and the coherency at the substrate-alloy layer interface was destroyed.

Bibliography

Chilton, B. T., Robinson, B. J., Thompson, D. A., Jackman, T. E., & Baribeau, J.-M. (1989). Solid phase epitaxial regrowth of Si1âxGex/Si strained-layer structures amorphized by ion implantation. Applied Physics Letters, 54(1), 42â44.

Authors 5

B. T. Chilton (first)
B. J. Robinson (additional)
D. A. Thompson (additional)
T. E. Jackman (additional)
J.-M. Baribeau (additional)

References 8 Referenced 43

10.1016/0040-6090(76)90318-7 / Thin Solid Films (1976)
10.1063/1.340312 / J. Appl. Phys. (1988)
{'key': '2024020223095863800_r3'}
10.1002/j.1538-7305.1960.tb03928.x / Bell Syst. Tech. J. (1960)
10.1103/PhysRevLett.59.2455 / Phys. Rev. Lett. (1987)
{'key': '2024020223095863800_r6', 'first-page': '322', 'volume': '47', 'year': '1983', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1983)
{'key': '2024020223095863800_r7'}
{'key': '2024020223095863800_r8', 'first-page': '118', 'volume': '27', 'year': '1974', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1974)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 6:22 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 6:38 p.m.)
Issued	36 years, 8 months ago (Jan. 2, 1989)
Published	36 years, 8 months ago (Jan. 2, 1989)
Published Print	36 years, 8 months ago (Jan. 2, 1989)

Funders 0

None

BibTeX

@article{Chilton_1989, title={Solid phase epitaxial regrowth of Si1−xGex/Si strained-layer structures amorphized by ion implantation}, volume={54}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.100828}, DOI={10.1063/1.100828}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chilton, B. T. and Robinson, B. J. and Thompson, D. A. and Jackman, T. E. and Baribeau, J.-M.}, year={1989}, month=jan, pages={42–44} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        10
      ]
    ],
    "date-time": "2024-02-10T23:38:32Z",
    "timestamp": 1707608312980
  },
  "reference-count": 8,
  "publisher": "AIP Publishing",
  "issue": "1",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1989,
        1,
        2
      ]
    ]
  },
  "abstract": "<jats:p>Strained-layer structures consisting of \u223c30\u201335 nm Si1\u2212xGex (x=0.16\u20130.29) and 33 nm Si deposited by molecular beam epitaxy on a (100)Si substrate have been amorphized by ion implantation at 40 K with 120 keV As+. Rutherford backscattering/channeling measurements using 2 MeV He+ ions have been used to measure the thickness of the amorphous layer and monitor the subsequent epitaxial regrowth occurring as a result of annealing at 560\u2013600\u2009\u00b0C. Angular scans across the {110} planar channels indicate that the initial crystallinity and strain was recovered for x=0.16; however, for x=0.29 crystal quality was greatly reduced and the coherency at the substrate-alloy layer interface was destroyed.</jats:p>",
  "DOI": "10.1063/1.100828",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:51:02Z",
    "timestamp": 1027687862000
  },
  "page": "42-44",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 43,
  "title": "Solid phase epitaxial regrowth of Si1\u2212<i>x</i>Ge<i>x</i>/Si strained-layer structures amorphized by ion implantation",
  "prefix": "10.1063",
  "volume": "54",
  "author": [
    {
      "given": "B. T.",
      "family": "Chilton",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S\u20094M1, Canada"
        }
      ]
    },
    {
      "given": "B. J.",
      "family": "Robinson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S\u20094M1, Canada"
        }
      ]
    },
    {
      "given": "D. A.",
      "family": "Thompson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S\u20094M1, Canada"
        }
      ]
    },
    {
      "given": "T. E.",
      "family": "Jackman",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Microstructural Sciences Laboratory, National Research Council of Canada, Ottawa, Ontario K1A\u2009OR6, Canada"
        }
      ]
    },
    {
      "given": "J.-M.",
      "family": "Baribeau",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Microstructural Sciences Laboratory, National Research Council of Canada, Ottawa, Ontario K1A\u2009OR6, Canada"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020223095863800_r1",
      "doi-asserted-by": "crossref",
      "first-page": "303",
      "DOI": "10.1016/0040-6090(76)90318-7",
      "volume": "32",
      "year": "1976",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020223095863800_r2",
      "doi-asserted-by": "crossref",
      "first-page": "5738",
      "DOI": "10.1063/1.340312",
      "volume": "63",
      "year": "1988",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020223095863800_r3"
    },
    {
      "key": "2024020223095863800_r4",
      "doi-asserted-by": "crossref",
      "first-page": "205",
      "DOI": "10.1002/j.1538-7305.1960.tb03928.x",
      "volume": "39",
      "year": "1960",
      "journal-title": "Bell Syst. Tech. J."
    },
    {
      "key": "2024020223095863800_r5",
      "doi-asserted-by": "crossref",
      "first-page": "2455",
      "DOI": "10.1103/PhysRevLett.59.2455",
      "volume": "59",
      "year": "1987",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020223095863800_r6",
      "first-page": "322",
      "volume": "47",
      "year": "1983",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020223095863800_r7"
    },
    {
      "key": "2024020223095863800_r8",
      "first-page": "118",
      "volume": "27",
      "year": "1974",
      "journal-title": "J. Cryst. Growth"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/54/1/42/18469004/42_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/54/1/42/18469004/42_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T23:22:09Z",
    "timestamp": 1706916129000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/54/1/42/54582/Solid-phase-epitaxial-regrowth-of-Si1-xGex-Si"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1989,
        1,
        2
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          1989,
          1,
          2
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.100828",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1989,
        1,
        2
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1989,
        1,
        2
      ]
    ]
  }
}