DOI: 10.1063/1.100712. Dopant distribution for maximum carrier mobility in selectively doped Al0.30Ga0.70As/GaAs heterostructures

Dopant distribution for maximum carrier mobility in selectively doped Al0.30Ga0.70As/GaAs heterostructures

10.1063/1.100712

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The magnitude of potential fluctuations due to remote ionized dopants is calculated for selectively doped heterostructures using unscreened and screened Coulomb potentials. Potential fluctuations are found to be minimized (corresponding to maximum carrier mobility) if the dopant distribution is δ-function-like. Our experimental study of electron mobilities in selectively doped heterostructures grown by molecular beam epitaxy reveals that carrier mobility indeed increases as the thickness of the doped layer is reduced, in agreement with the calculation. A peak electron mobility of 5.5×106 cm2 /V s is obtained at low temperatures in a selectively δ-doped heterostructure.

Bibliography

Schubert, E. F., Pfeiffer, L., West, K. W., & Izabelle, A. (1989). Dopant distribution for maximum carrier mobility in selectively doped Al0.30Ga0.70As/GaAs heterostructures. Applied Physics Letters, 54(14), 1350â1352.

Authors 4

E. F. Schubert (first)
Loren Pfeiffer (additional)
K. W. West (additional)
A. Izabelle (additional)

References 19 Referenced 31

10.1063/1.97710 / Appl. Phys. Lett. (1987)
10.1103/PhysRevB.37.4317 / Phys. Rev. B (1988)
10.1063/1.95178 / Appl. Phys. Lett. (1984)
10.1063/1.99219 / Appl. Phys. Lett. (1988)
10.1116/1.583411 / J. Vac. Sci. Technol. B (1986)
{'key': '2024020223304220900_r6', 'first-page': '1609', 'volume': '22', 'year': '1983', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1983)
{'key': '2024020223304220900_r7'}
10.1103/PhysRevB.30.4571 / Phys. Rev. B (1984)
10.1116/1.571137 / J. Vac. Sci. Technol. (1981)
10.1016/0039-6028(82)90586-6 / Surf. Sci. (1982)
{'key': '2024020223304220900_r9b', 'first-page': '145', 'volume': '134', 'year': '1984', 'journal-title': 'Surf. Sci.'} / Surf. Sci. (1984)
10.1103/RevModPhys.54.437 / Rev. Mod. Phys. (1982)
10.1143/JPSJ.51.3893 / J. Phys. Soc. Jpn. (1982)
10.1143/JPSJ.51.3900 / J. Phys. Soc. Jpn. (1982)
10.1063/1.92481 / Appl. Phys. Lett. (1981)
10.1063/1.99114 / Appl. Phys. Lett. (1988)
{'key': '2024020223304220900_r14', 'first-page': '1170', 'volume': '51', 'year': '1988', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1988)
10.1051/jphys:0198700480120204900 / J. Phys. (Paris) (1987)
10.1103/PhysRevB.30.7021 / Phys. Rev. B (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 6:34 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 10:18 p.m.)
Issued	36 years, 5 months ago (April 3, 1989)
Published	36 years, 5 months ago (April 3, 1989)
Published Print	36 years, 5 months ago (April 3, 1989)

Funders 0

None

BibTeX

@article{Schubert_1989, title={Dopant distribution for maximum carrier mobility in selectively doped Al0.30Ga0.70As/GaAs heterostructures}, volume={54}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.100712}, DOI={10.1063/1.100712}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schubert, E. F. and Pfeiffer, Loren and West, K. W. and Izabelle, A.}, year={1989}, month=apr, pages={1350–1352} }

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