DOI: 10.1049/ip-cds:20050008. Silicon spin diffusion transistor: materials, physics and device characteristics

Silicon spin diffusion transistor: materials, physics and device characteristics

10.1049/ip-cds:20050008

Crossref journal-article

Institution of Engineering and Technology (IET)

IEE Proceedings - Circuits, Devices and Systems (265)

Bibliography

Dennis, C. L., Tiusan, C. V., Gregg, J. F., Ensell, G. J., & Thompson, S. M. (2005). Silicon spin diffusion transistor: materials, physics and device characteristics. IEE Proceedings - Circuits, Devices and Systems, 152(4), 340.

Authors 5

C.L. Dennis (first)
C.V. Tiusan (additional)
J.F. Gregg (additional)
G.J. Ensell (additional)
S.M. Thompson (additional)

References 32 Referenced 8

10.1103/PhysRevLett.61.2472
10.1126/science.260.5106.320 by Johnson (1993)
10.1103/PhysRevLett.74.5260
10.1063/1.1397257
10.1063/1.1474610
Ounadjela, K., and Hehn, M.: France, (Patent Application Number FR9904227)
10.1063/1.102730
10.1063/1.1637954
10.1103/PhysRevB.69.115314 by Fabian (2004)
10.1109/6.278401
{'key': '10.1049/ip-cds:20050008_r11', 'first-page': '7764', 'volume': '60', 'author': 'Gardelis', 'year': '1999'} by Gardelis (1999)
Private communication, cited in (see reference 8)
10.1063/1.1883722 by Bandyopadhyay (2005)
{'key': '10.1049/ip-cds:20050008_r14', 'first-page': '359', 'volume': '48', 'author': 'Mead', 'year': '1960'} by Mead (1960)
10.1109/PROC.1973.9205 by Kisaki (1973)
Gregg, J.F., and Sparks, P.D.: USA, (US6218718)
10.1088/0022-3727/36/2/303
Dennis, C.L.: ‘A Silicon-based spin transistor’, 2004, PhD, the University of Oxford
10.1080/00018730110102727 by Mott (2004)
{'key': '10.1049/ip-cds:20050008_r20', 'first-page': '2843', 'volume': '52', 'author': 'Xu', 'year': '1995'} by Xu (1995)
{'key': '10.1049/ip-cds:20050008_r21', 'first-page': '173', 'volume': '119', 'author': 'Fowler', 'year': '1928'} by Fowler (1928)
10.1063/1.120616
10.1103/PhysRevLett.20.101 by Schwerer (1968)
Dennis, C.L., Gregg, J.F., Thompson, S.M., and Ensell, G.J.: ‘Evidence for electrical spin tunnel injection into Si’, submitted 2004
{'key': '10.1049/ip-cds:20050008_r25', 'first-page': '225', 'volume': '54A', 'author': 'Julliere', 'year': '1975'} by Julliere (1975)
Coey, J.M.D.: ‘Materials for spin electronics’, Thornton, M., Ziese, M., Spin electronics, (Springer, New York 2001), p. 278 (10.1007/3-540-45258-3_12)
{'key': '10.1049/ip-cds:20050008_r27', 'first-page': 'R4790', 'volume': '62', 'author': 'Schmidt', 'year': '2000'} by Schmidt (2000)
10.1088/0022-3727/35/3/304
10.1016/S0304-8853(03)00276-2
Dennis, C.L., Tiusan, C.V., Gregg, J.F., Thompson, S.M., Ensell, G.J.: ‘Characteristics of Si-based spin tunnel transistor: theory and experiment’, in preparation 2005
{'key': '10.1049/ip-cds:20050008_r31', 'first-page': '290', 'volume': '1383', 'author': 'Dennis', 'year': '2005', 'ISSN': 'http://id.crossref.org/issn/0304-8853', 'issn-type': 'print'} by Dennis (2005)
Dennis, C.L., Ferreira, R.A., Tiusan, C.V., Gregg, J.F., and Freitas, P.P.: ‘Tunnel barrier fabrication on Si and its application to spintronics’, in preparation 2005 (10.1016/j.jmmm.2004.11.443)

Dates

Type	When
Created	19 years, 11 months ago (Sept. 15, 2005, 12:02 p.m.)
Deposited	2 years, 3 months ago (May 4, 2023, 10:37 a.m.)
Indexed	4 months, 1 week ago (April 11, 2025, 7:49 a.m.)
Issued	20 years, 7 months ago (Jan. 1, 2005)
Published	20 years, 7 months ago (Jan. 1, 2005)
Published Print	20 years, 7 months ago (Jan. 1, 2005)

Funders 0

None

BibTeX

@article{Dennis_2005, title={Silicon spin diffusion transistor: materials, physics and device characteristics}, volume={152}, ISSN={1350-2409}, url={http://dx.doi.org/10.1049/ip-cds:20050008}, DOI={10.1049/ip-cds:20050008}, number={4}, journal={IEE Proceedings - Circuits, Devices and Systems}, publisher={Institution of Engineering and Technology (IET)}, author={Dennis, C.L. and Tiusan, C.V. and Gregg, J.F. and Ensell, G.J. and Thompson, S.M.}, year={2005}, pages={340} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        11
      ]
    ],
    "date-time": "2025-04-11T11:49:19Z",
    "timestamp": 1744372159284
  },
  "reference-count": 32,
  "publisher": "Institution of Engineering and Technology (IET)",
  "issue": "4",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2005
      ]
    ]
  },
  "DOI": "10.1049/ip-cds:20050008",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        9,
        15
      ]
    ],
    "date-time": "2005-09-15T16:02:51Z",
    "timestamp": 1126800171000
  },
  "page": "340",
  "source": "Crossref",
  "is-referenced-by-count": 8,
  "title": "Silicon spin diffusion transistor: materials, physics and device characteristics",
  "prefix": "10.1049",
  "volume": "152",
  "author": [
    {
      "given": "C.L.",
      "family": "Dennis",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "C.V.",
      "family": "Tiusan",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.F.",
      "family": "Gregg",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "G.J.",
      "family": "Ensell",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "S.M.",
      "family": "Thompson",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "265",
  "reference": [
    {
      "key": "10.1049/ip-cds:20050008_r1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevLett.61.2472"
    },
    {
      "key": "10.1049/ip-cds:20050008_r2",
      "doi-asserted-by": "crossref",
      "first-page": "320",
      "DOI": "10.1126/science.260.5106.320",
      "volume": "260",
      "author": "Johnson",
      "year": "1993",
      "ISSN": "http://id.crossref.org/issn/0036-8075",
      "issn-type": "print"
    },
    {
      "key": "10.1049/ip-cds:20050008_r3",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevLett.74.5260"
    },
    {
      "key": "10.1049/ip-cds:20050008_r4",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1397257"
    },
    {
      "key": "10.1049/ip-cds:20050008_r5",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1474610"
    },
    {
      "key": "10.1049/ip-cds:20050008_r6",
      "unstructured": "Ounadjela, K., and Hehn, M.: France, (Patent Application Number FR9904227)"
    },
    {
      "key": "10.1049/ip-cds:20050008_r7",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.102730"
    },
    {
      "key": "10.1049/ip-cds:20050008_r8",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1637954"
    },
    {
      "key": "10.1049/ip-cds:20050008_r9",
      "doi-asserted-by": "crossref",
      "first-page": "115314",
      "DOI": "10.1103/PhysRevB.69.115314",
      "volume": "69",
      "author": "Fabian",
      "year": "2004",
      "ISSN": "http://id.crossref.org/issn/0163-1829",
      "issn-type": "print"
    },
    {
      "key": "10.1049/ip-cds:20050008_r10",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/6.278401"
    },
    {
      "key": "10.1049/ip-cds:20050008_r11",
      "first-page": "7764",
      "volume": "60",
      "author": "Gardelis",
      "year": "1999"
    },
    {
      "key": "10.1049/ip-cds:20050008_r12",
      "unstructured": "Private communication, cited in (see reference 8)"
    },
    {
      "key": "10.1049/ip-cds:20050008_r13",
      "doi-asserted-by": "crossref",
      "first-page": "133502",
      "DOI": "10.1063/1.1883722",
      "volume": "86",
      "author": "Bandyopadhyay",
      "year": "2005",
      "ISSN": "http://id.crossref.org/issn/0003-6951",
      "issn-type": "print"
    },
    {
      "key": "10.1049/ip-cds:20050008_r14",
      "first-page": "359",
      "volume": "48",
      "author": "Mead",
      "year": "1960"
    },
    {
      "key": "10.1049/ip-cds:20050008_r15",
      "doi-asserted-by": "crossref",
      "first-page": "1053",
      "DOI": "10.1109/PROC.1973.9205",
      "volume": "61",
      "author": "Kisaki",
      "year": "1973",
      "ISSN": "http://id.crossref.org/issn/0018-9219",
      "issn-type": "print"
    },
    {
      "key": "10.1049/ip-cds:20050008_r16",
      "unstructured": "Gregg, J.F., and Sparks, P.D.: USA, (US6218718)"
    },
    {
      "key": "10.1049/ip-cds:20050008_r17",
      "doi-asserted-by": "publisher",
      "DOI": "10.1088/0022-3727/36/2/303"
    },
    {
      "key": "10.1049/ip-cds:20050008_r18",
      "unstructured": "Dennis, C.L.: \u2018A Silicon-based spin transistor\u2019, 2004, PhD, the University of Oxford"
    },
    {
      "key": "10.1049/ip-cds:20050008_r19",
      "doi-asserted-by": "crossref",
      "first-page": "865",
      "DOI": "10.1080/00018730110102727",
      "volume": "50",
      "author": "Mott",
      "year": "2004",
      "ISSN": "http://id.crossref.org/issn/0001-8732",
      "issn-type": "print"
    },
    {
      "key": "10.1049/ip-cds:20050008_r20",
      "first-page": "2843",
      "volume": "52",
      "author": "Xu",
      "year": "1995"
    },
    {
      "key": "10.1049/ip-cds:20050008_r21",
      "first-page": "173",
      "volume": "119",
      "author": "Fowler",
      "year": "1928"
    },
    {
      "key": "10.1049/ip-cds:20050008_r22",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.120616"
    },
    {
      "key": "10.1049/ip-cds:20050008_r23",
      "doi-asserted-by": "crossref",
      "first-page": "101",
      "DOI": "10.1103/PhysRevLett.20.101",
      "volume": "20",
      "author": "Schwerer",
      "year": "1968",
      "ISSN": "http://id.crossref.org/issn/0031-9007",
      "issn-type": "print"
    },
    {
      "key": "10.1049/ip-cds:20050008_r24",
      "unstructured": "Dennis, C.L., Gregg, J.F., Thompson, S.M., and Ensell, G.J.: \u2018Evidence for electrical spin tunnel injection into Si\u2019, submitted 2004"
    },
    {
      "key": "10.1049/ip-cds:20050008_r25",
      "first-page": "225",
      "volume": "54A",
      "author": "Julliere",
      "year": "1975"
    },
    {
      "key": "10.1049/ip-cds:20050008_r26",
      "doi-asserted-by": "crossref",
      "unstructured": "Coey, J.M.D.: \u2018Materials for spin electronics\u2019, Thornton, M., Ziese, M., Spin electronics, (Springer, New York 2001), p. 278",
      "DOI": "10.1007/3-540-45258-3_12"
    },
    {
      "key": "10.1049/ip-cds:20050008_r27",
      "first-page": "R4790",
      "volume": "62",
      "author": "Schmidt",
      "year": "2000"
    },
    {
      "key": "10.1049/ip-cds:20050008_r28",
      "doi-asserted-by": "publisher",
      "DOI": "10.1088/0022-3727/35/3/304"
    },
    {
      "key": "10.1049/ip-cds:20050008_r29",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S0304-8853(03)00276-2"
    },
    {
      "key": "10.1049/ip-cds:20050008_r30",
      "unstructured": "Dennis, C.L., Tiusan, C.V., Gregg, J.F., Thompson, S.M., Ensell, G.J.: \u2018Characteristics of Si-based spin tunnel transistor: theory and experiment\u2019, in preparation 2005"
    },
    {
      "key": "10.1049/ip-cds:20050008_r31",
      "first-page": "290",
      "volume": "1383",
      "author": "Dennis",
      "year": "2005",
      "ISSN": "http://id.crossref.org/issn/0304-8853",
      "issn-type": "print"
    },
    {
      "key": "10.1049/ip-cds:20050008_r32",
      "doi-asserted-by": "crossref",
      "unstructured": "Dennis, C.L., Ferreira, R.A., Tiusan, C.V., Gregg, J.F., and Freitas, P.P.: \u2018Tunnel barrier fabrication on Si and its application to spintronics\u2019, in preparation 2005",
      "DOI": "10.1016/j.jmmm.2004.11.443"
    }
  ],
  "container-title": "IEE Proceedings - Circuits, Devices and Systems",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://digital-library.theiet.org/content/journals/10.1049/ip-cds_20050008?crawler=true&mimetype=application/pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        5,
        4
      ]
    ],
    "date-time": "2023-05-04T14:37:39Z",
    "timestamp": 1683211059000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://digital-library.theiet.org/content/journals/10.1049/ip-cds_20050008"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2005
      ]
    ]
  },
  "references-count": 32,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          2005
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1049/ip-cds:20050008",
  "relation": {},
  "ISSN": [
    "1350-2409"
  ],
  "subject": [],
  "container-title-short": "IEE Proc., Circuits Devices Syst.",
  "published": {
    "date-parts": [
      [
        2005
      ]
    ]
  }
}