Crossref
journal-article
Institution of Engineering and Technology (IET)
Electronics Letters (265)
References
9
Referenced
13
{'first-page': '57', 'year': '2000', 'author': 'Kedzierski', 'key': '10.1049/el:20052665_r1'}
by Kedzierski (2000)10.1109/LED.2004.838053
{'key': '10.1049/el:20052665_r3', 'first-page': '378', 'volume': 'B89', 'author': 'Huda', 'year': '2002', 'ISSN': 'http://id.crossref.org/issn/0025-5416', 'issn-type': 'print'}
by Huda (2002)10.1109/LED.2004.831582
{'key': '10.1049/el:20052665_r5', 'first-page': '23', 'author': 'Zhang', 'year': '2005', 'journal-title': 'Proc. 6th Int. Conf. on Ultimate Integration of Silicon'}
/ Proc. 6th Int. Conf. on Ultimate Integration of Silicon by Zhang (2005)10.1006/spmi.2000.0954
10.1063/1.1613357
10.1063/1.1513657
10.1103/PhysRevLett.92.048301
by Appenzeller (2004)
Dates
Type | When |
---|---|
Created | 19 years, 11 months ago (Sept. 19, 2005, 8:48 a.m.) |
Deposited | 9 months, 2 weeks ago (Nov. 12, 2024, 11:23 a.m.) |
Indexed | 9 months, 2 weeks ago (Nov. 13, 2024, 12:31 a.m.) |
Issued | 19 years, 11 months ago (Sept. 15, 2005) |
Published | 19 years, 11 months ago (Sept. 15, 2005) |
Published Print | 19 years, 11 months ago (Sept. 15, 2005) |
@article{Zhang_2005, title={Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation}, volume={41}, ISSN={1350-911X}, url={http://dx.doi.org/10.1049/el:20052665}, DOI={10.1049/el:20052665}, number={19}, journal={Electronics Letters}, publisher={Institution of Engineering and Technology (IET)}, author={Zhang, M. and Knoch, J. and Zhao, Q.T. and Fox, A. and Lenk, St. and Mantl, S.}, year={2005}, month=sep, pages={1085–1086} }