DOI: 10.1049/el:20001401. 7.5 kW/mm <sup>2</sup> current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

7.5 kW/mm 2 current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

10.1049/el:20001401

Crossref journal-article

Institution of Engineering and Technology (IET)

Electronics Letters (265)

Bibliography

Simin, G., Hu, X., Ilinskaya, N., Kumar, A., Koudymov, A., Zhang, J., Asif Khan, M., Gaska, R., & Shur, M. S. (2000). 7.5 kW/mm 2 current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates. Electronics Letters, 36(24), 2043â2044.

Authors 9

G. Simin (first)
X. Hu (additional)
N. Ilinskaya (additional)
A. Kumar (additional)
A. Koudymov (additional)
J. Zhang (additional)
M. Asif Khan (additional)
R. Gaska (additional)
M.S. Shur (additional)

References 11 Referenced 95

Gaska, R., Shur, M.S., and Khan, A.: ‘GaN-based HEMTs’, Manasreh, O., Yu, E., (Gordon & Breach to be published
{'key': '10.1049/el:20001401_r2', 'first-page': '37', 'author': 'Sheppard', 'year': '2000', 'journal-title': 'Device Res. Conf. Dig.'} / Device Res. Conf. Dig. by Sheppard (2000)
10.1049/el:20000352 by Nguyen (2000)
10.1049/el:19971127 by Wu (1997)
10.1109/55.821668 by Asif Khan (2000)
10.1063/1.1290269 by Asif Khan (2000)
{'author': 'Simin', 'key': '10.1049/el:20001401_r7'} by Simin
10.1109/16.536819 by Weitzel (1996)
10.1143/JJAP.39.2008 by Yano (2000)
{'key': '10.1049/el:20001401_r10', 'first-page': '813', 'volume': '142', 'author': 'Palmour', 'year': '1996', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. by Palmour (1996)
10.1109/16.830981 by Dang (2000)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 7:05 a.m.)
Deposited	9 months, 2 weeks ago (Nov. 12, 2024, 1:32 p.m.)
Indexed	1 month, 1 week ago (July 22, 2025, 7:14 a.m.)
Issued	24 years, 9 months ago (Nov. 23, 2000)
Published	24 years, 9 months ago (Nov. 23, 2000)
Published Print	24 years, 9 months ago (Nov. 23, 2000)

Funders 0

None

BibTeX

@article{Simin_2000, title={7.5 kW/mm 2 current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates}, volume={36}, ISSN={1350-911X}, url={http://dx.doi.org/10.1049/el:20001401}, DOI={10.1049/el:20001401}, number={24}, journal={Electronics Letters}, publisher={Institution of Engineering and Technology (IET)}, author={Simin, G. and Hu, X. and Ilinskaya, N. and Kumar, A. and Koudymov, A. and Zhang, J. and Asif Khan, M. and Gaska, R. and Shur, M.S.}, year={2000}, month=nov, pages={2043–2044} }

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