DOI: 10.1049/el:19981451. GaAsSb: A novel material for 1.3 µm VCSELs

GaAsSb: A novel material for 1.3 µm VCSELs

10.1049/el:19981451

Crossref journal-article

Institution of Engineering and Technology (IET)

Electronics Letters (265)

Bibliography

Anan, T., Nishi, K., Sugou, S., Yamada, M., Tokutome, K., & Gomyo, A. (1998). GaAsSb: A novel material for 1.3 Âµm VCSELs. Electronics Letters, 34(22), 2127â2129.

Authors 6

T. Anan (first)
K. Nishi (additional)
S. Sugou (additional)
M. Yamada (additional)
K. Tokutome (additional)
A. Gomyo (additional)

References 7 Referenced 72

{'key': '10.1049/el:19981451_r1', 'first-page': '409', 'volume': '3', 'author': 'Weigl', 'year': '1997'} by Weigl (1997)
10.1063/1.111913 by Dudley (1994)
{'key': '10.1049/el:19981451_r3', 'first-page': '719', 'volume': '3', 'author': 'Kondow', 'year': '1997'} by Kondow (1997)
10.1063/1.115386 by Mirin (1995)
10.1063/1.114321 by Peter (1995)
{'key': '10.1049/el:19981451_r6', 'first-page': '2191', 'volume': '47', 'author': 'Prins', 'year': '1993'} by Prins (1993)
10.1143/JJAP.17.2091 by Yano (1978)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 7 a.m.)
Deposited	9 months, 3 weeks ago (Nov. 12, 2024, 10:15 a.m.)
Indexed	4 months, 3 weeks ago (April 12, 2025, 2:02 a.m.)
Issued	26 years, 10 months ago (Oct. 29, 1998)
Published	26 years, 10 months ago (Oct. 29, 1998)
Published Print	26 years, 10 months ago (Oct. 29, 1998)

Funders 0

None

BibTeX

@article{Anan_1998, title={GaAsSb: A novel material for 1.3 µm VCSELs}, volume={34}, ISSN={1350-911X}, url={http://dx.doi.org/10.1049/el:19981451}, DOI={10.1049/el:19981451}, number={22}, journal={Electronics Letters}, publisher={Institution of Engineering and Technology (IET)}, author={Anan, T. and Nishi, K. and Sugou, S. and Yamada, M. and Tokutome, K. and Gomyo, A.}, year={1998}, month=oct, pages={2127–2129} }

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