DOI: 10.1049/el:19970818. AlGaN-GaN heterostructure FETs with offset gatedesign

AlGaN-GaN heterostructure FETs with offset gatedesign

10.1049/el:19970818

Crossref journal-article

Institution of Engineering and Technology (IET)

Electronics Letters (265)

Bibliography

Gaska, R., Chen, Q., Yang, J., Asif Khan, M., Shur, M. S., Ping, A., & Adesida, I. (1997). AlGaN-GaN heterostructure FETs with offset gatedesign. Electronics Letters, 33(14), 1255â1257.

Authors 7

R. Gaska (first)
Q. Chen (additional)
J. Yang (additional)
M. Asif Khan (additional)
M.S. Shur (additional)
A. Ping (additional)
I. Adesida (additional)

References 8 Referenced 38

10.1063/1.117601 by Mohammad (1996)
10.1063/1.117607 by Wu (1996)
{'key': '10.1049/el:19970818_r3', 'first-page': '22', 'volume': '22', 'author': 'Mohammad', 'year': '1997'} by Mohammad (1997)
10.1049/el:19970403 by Chen (1997)
{'key': '10.1049/el:19970818_r5', 'first-page': '381', 'author': 'Shur', 'year': '1978', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. by Shur (1978)
10.1109/55.506356 by Asif Khan (1996)
10.1049/el:19960206 by Khan (1996)
Sudarshan, T.S., Madangarli, V.P., Gradinaru, G., Chen, Q., and Khan, M.A., Unpublished

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 6:58 a.m.)
Deposited	9 months, 3 weeks ago (Nov. 12, 2024, 1:50 p.m.)
Indexed	5 months ago (April 1, 2025, 7:42 a.m.)
Issued	28 years, 2 months ago (July 3, 1997)
Published	28 years, 2 months ago (July 3, 1997)
Published Print	28 years, 2 months ago (July 3, 1997)

Funders 0

None

BibTeX

@article{Gaska_1997, title={AlGaN-GaN heterostructure FETs with offset gatedesign}, volume={33}, ISSN={1350-911X}, url={http://dx.doi.org/10.1049/el:19970818}, DOI={10.1049/el:19970818}, number={14}, journal={Electronics Letters}, publisher={Institution of Engineering and Technology (IET)}, author={Gaska, R. and Chen, Q. and Yang, J. and Asif Khan, M. and Shur, M.S. and Ping, A. and Adesida, I.}, year={1997}, month=jul, pages={1255–1257} }

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