DOI: 10.1049/el:19960943. Comparison of dry etch techniques for GaN

Comparison of dry etch techniques for GaN

10.1049/el:19960943

Crossref journal-article

Institution of Engineering and Technology (IET)

Electronics Letters (265)

Bibliography

Shul, R. J., McClellan, G. B., Pearton, S. J., Abernathy, C. R., Constantine, C., & Barratt, C. (1996). Comparison of dry etch techniques for GaN. Electronics Letters, 32(15), 1408â1409.

Authors 6

R.J. Shul (first)
G.B. McClellan (additional)
S.J. Pearton (additional)
C.R. Abernathy (additional)
C. Constantine (additional)
C. Barratt (additional)

References 5 Referenced 56

10.1063/1.109374 by Nakamura (1993)
10.1049/el:19951408 by Khan (1995)
10.1063/1.115882 by Zopler (1996)
10.1063/1.110331 by Adesida (1993)
{'key': '10.1049/el:19960943_r5', 'first-page': '869', 'volume': '11', 'author': 'Abernathy', 'year': '1993'} by Abernathy (1993)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 6:57 a.m.)
Deposited	9 months, 3 weeks ago (Nov. 12, 2024, 9:54 a.m.)
Indexed	9 months, 3 weeks ago (Nov. 13, 2024, 12:28 a.m.)
Issued	29 years, 1 month ago (July 18, 1996)
Published	29 years, 1 month ago (July 18, 1996)
Published Print	29 years, 1 month ago (July 18, 1996)

Funders 0

None

BibTeX

@article{Shul_1996, title={Comparison of dry etch techniques for GaN}, volume={32}, ISSN={1350-911X}, url={http://dx.doi.org/10.1049/el:19960943}, DOI={10.1049/el:19960943}, number={15}, journal={Electronics Letters}, publisher={Institution of Engineering and Technology (IET)}, author={Shul, R.J. and McClellan, G.B. and Pearton, S.J. and Abernathy, C.R. and Constantine, C. and Barratt, C.}, year={1996}, month=jul, pages={1408–1409} }

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