Crossref
journal-article
Institution of Engineering and Technology (IET)
Electronics Letters (265)
References
6
Referenced
135
{'key': '10.1049/el:19940833_r1', 'first-page': '19', 'author': 'Driver', 'year': '1993', 'journal-title': 'Proc. 1993 GaAs IC Symp.'}
/ Proc. 1993 GaAs IC Symp. by Driver (1993)10.1063/1.106798
by Khan (1992)10.1063/1.109549
by Khan (1993){'key': '10.1049/el:19940833_r4', 'volume': '339', 'author': 'Rowland', 'year': '1994', 'journal-title': 'Material Research Society Symp. Proc. on Diamond, SiC, and Nitride Wide-bandgap Semiconductors'}
/ Material Research Society Symp. Proc. on Diamond, SiC, and Nitride Wide-bandgap Semiconductors by Rowland (1994)10.1063/1.111961
by Lin (1994)- Sze, S.M.: ‘Physics of semiconductor devices’, (John Wiley & Sons New York 1981),2
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 7:10 a.m.) |
Deposited | 9 months, 2 weeks ago (Nov. 12, 2024, 9:29 a.m.) |
Indexed | 9 months, 2 weeks ago (Nov. 12, 2024, 10:10 a.m.) |
Issued | 31 years, 1 month ago (July 21, 1994) |
Published | 31 years, 1 month ago (July 21, 1994) |
Published Print | 31 years, 1 month ago (July 21, 1994) |
@article{Binari_1994, title={Microwave performance of GaN MESFETs}, volume={30}, ISSN={1350-911X}, url={http://dx.doi.org/10.1049/el:19940833}, DOI={10.1049/el:19940833}, number={15}, journal={Electronics Letters}, publisher={Institution of Engineering and Technology (IET)}, author={Binari, S.C. and Rowland, L.B. and Kruppa, W. and Kelner, G. and Doverspike, K. and Gaskill, D.K.}, year={1994}, month=jul, pages={1248–1249} }