Abstract
Electron energy loss spectroscopy was used to observe the segregation of Al on a Si surface above the melting point of Al. A mixture of Al and Si particles was heated above the melting point of Al in a vacuum of 1 × 10−5 Pa. The Si surface, which initially had been covered with an amorphous oxide layer before heating, became clean and atomically facetted when the Al melted. It was shown that the Si surface was segregated with Al.
Dates
Type | When |
---|---|
Created | 22 years, 5 months ago (March 12, 2003, 1:31 a.m.) |
Deposited | 1 year, 10 months ago (Oct. 18, 2023, 8:27 a.m.) |
Indexed | 1 year, 10 months ago (Oct. 19, 2023, 1:18 a.m.) |
Issued | 24 years, 1 month ago (July 1, 2001) |
Published | 24 years, 1 month ago (July 1, 2001) |
Published Online | 23 years, 8 months ago (Dec. 21, 2001) |
Published Print | 24 years, 1 month ago (July 1, 2001) |
@article{Tsukimoto_2001, title={In situ high resolution electron microscopy/electron energy loss spectroscopy observation of wetting of a Si surface by molten Al}, volume={203}, ISSN={1365-2818}, url={http://dx.doi.org/10.1046/j.1365-2818.2001.00905.x}, DOI={10.1046/j.1365-2818.2001.00905.x}, number={1}, journal={Journal of Microscopy}, publisher={Wiley}, author={Tsukimoto, S. and Arai, S. and Konno, M. and Kamino, T. and Sasaki, K. and Saka, H.}, year={2001}, month=jul, pages={17–21} }