DOI: 10.1039/b410324f. Electrical properties of V2O5 thin films obtained by atomic layer deposition (ALD)

Electrical properties of V2O5 thin films obtained by atomic layer deposition (ALD)

10.1039/b410324f

Crossref journal-article

Royal Society of Chemistry (RSC)

Journal of Materials Chemistry (292)

Bibliography

Badot, J. C., Mantoux, A., Baffier, N., Dubrunfaut, O., & Lincot, D. (2004). Electrical properties of V2O5 thin films obtained by atomic layer deposition (ALD). Journal of Materials Chemistry, 14(23), 3411.

Authors 5

J. C. Badot (first)
A. Mantoux (additional)
N. Baffier (additional)
O. Dubrunfaut (additional)
D. Lincot (additional)

References 0 Referenced 67

None

Dates

Type	When
Created	20 years, 9 months ago (Nov. 24, 2004, 11:37 a.m.)
Deposited	1 year, 4 months ago (April 17, 2024, 5 a.m.)
Indexed	1 year, 1 month ago (July 10, 2024, 1:53 p.m.)
Issued	21 years, 7 months ago (Jan. 1, 2004)
Published	21 years, 7 months ago (Jan. 1, 2004)
Published Print	21 years, 7 months ago (Jan. 1, 2004)

Funders 0

None

BibTeX

@article{Badot_2004, title={Electrical properties of V2O5 thin films obtained by atomic layer deposition (ALD)}, volume={14}, ISSN={1364-5501}, url={http://dx.doi.org/10.1039/b410324f}, DOI={10.1039/b410324f}, number={23}, journal={Journal of Materials Chemistry}, publisher={Royal Society of Chemistry (RSC)}, author={Badot, J. C. and Mantoux, A. and Baffier, N. and Dubrunfaut, O. and Lincot, D.}, year={2004}, pages={3411} }

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