DOI: 10.1039/c7ra12233k. Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices

Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices

10.1039/c7ra12233k

Crossref journal-article

Royal Society of Chemistry (RSC)

RSC Advances (292)

Abstract

Combining thermodynamic calculation and phase-field simulation, we revealed that mechanical switching of polarization can be achieved in ferroelectric by shear stressviaa simple mechanism where the presence of flexoelectricity is not necessary.

Bibliography

Chen, W. J., Yuan, S., Ma, L. L., Ji, Y., Wang, B., & Zheng, Y. (2018). Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices. RSC Advances, 8(8), 4434â4444.

Authors 6

W. J. Chen (first)
Shuai Yuan (additional)
L. L. Ma (additional)
Ye Ji (additional)
Biao Wang (additional)
Yue Zheng (additional)

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Dates

Type	When
Created	7 years, 7 months ago (Jan. 24, 2018, 3:13 a.m.)
Deposited	1 year, 4 months ago (April 17, 2024, 7:23 p.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 2:05 p.m.)
Issued	7 years, 8 months ago (Jan. 1, 2018)
Published	7 years, 8 months ago (Jan. 1, 2018)
Published Online	7 years, 8 months ago (Jan. 1, 2018)

Funders 2

National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
Labels11
1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
5. NSF of China
6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
9. NSFC
10. NNSF
11. NNSFC
Awards4
1. 11474363
2. 51172291
3. 11672339
4. 11602310
China Scholarship Council 10.13039/501100004543
Region: Asia
gov (National government)
Labels1
1. CSC

BibTeX

@article{Chen_2018, title={Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices}, volume={8}, ISSN={2046-2069}, url={http://dx.doi.org/10.1039/c7ra12233k}, DOI={10.1039/c7ra12233k}, number={8}, journal={RSC Advances}, publisher={Royal Society of Chemistry (RSC)}, author={Chen, W. J. and Yuan, Shuai and Ma, L. L. and Ji, Ye and Wang, Biao and Zheng, Yue}, year={2018}, pages={4434–4444} }

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