DOI: 10.1039/c5tc03064a. Efficient silicon quantum dots light emitting diodes with an inverted device structure

Efficient silicon quantum dots light emitting diodes with an inverted device structure

10.1039/c5tc03064a

Crossref journal-article

Royal Society of Chemistry (RSC)

Journal of Materials Chemistry C (292)

Abstract

SiQDs with an average diameter of 2.6 ± 0.5 nm are used as the light emitting material in high-efficiency inverted structure light emitting diodes.

Bibliography

Yao, L., Yu, T., Ba, L., Meng, H., Fang, X., Wang, Y., Li, L., Rong, X., Wang, S., Wang, X., Ran, G., Pi, X., & Qin, G. (2016). Efficient silicon quantum dots light emitting diodes with an inverted device structure. Journal of Materials Chemistry C, 4(4), 673â677.

Authors 13

Li Yao (first)
Ting Yu (additional)
Lixiang Ba (additional)
Hu Meng (additional)
Xin Fang (additional)
Yilun Wang (additional)
Lei Li (additional)
Xin Rong (additional)
Suo Wang (additional)
Xinqiang Wang (additional)
Guangzhao Ran (additional)
Xiaodong Pi (additional)
Guogang Qin (additional)

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Dates

Type	When
Created	9 years, 9 months ago (Nov. 12, 2015, 4 a.m.)
Deposited	1 year, 2 months ago (June 12, 2024, 7:49 a.m.)
Indexed	1 week, 6 days ago (Aug. 23, 2025, 9:55 p.m.)
Issued	9 years, 8 months ago (Jan. 1, 2016)
Published	9 years, 8 months ago (Jan. 1, 2016)
Published Online	9 years, 8 months ago (Jan. 1, 2016)

Funders 0

None

BibTeX

@article{Yao_2016, title={Efficient silicon quantum dots light emitting diodes with an inverted device structure}, volume={4}, ISSN={2050-7534}, url={http://dx.doi.org/10.1039/c5tc03064a}, DOI={10.1039/c5tc03064a}, number={4}, journal={Journal of Materials Chemistry C}, publisher={Royal Society of Chemistry (RSC)}, author={Yao, Li and Yu, Ting and Ba, Lixiang and Meng, Hu and Fang, Xin and Wang, Yilun and Li, Lei and Rong, Xin and Wang, Suo and Wang, Xinqiang and Ran, Guangzhao and Pi, Xiaodong and Qin, Guogang}, year={2016}, pages={673–677} }

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