Crossref journal-article
Royal Society of Chemistry (RSC)
Nanoscale (292)
Abstract

Ultra high-k dielectric enables low-voltage enhancement-mode MoS2 transistor with high ON/OFF ratio, leading to low-power device.

Bibliography

Zhou, C., Wang, X., Raju, S., Lin, Z., Villaroman, D., Huang, B., Chan, H. L.-W., Chan, M., & Chai, Y. (2015). Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT. Nanoscale, 7(19), 8695–8700.

Authors 9
  1. Changjian Zhou (first)
  2. Xinsheng Wang (additional)
  3. Salahuddin Raju (additional)
  4. Ziyuan Lin (additional)
  5. Daniel Villaroman (additional)
  6. Baoling Huang (additional)
  7. Helen Lai-Wa Chan (additional)
  8. Mansun Chan (additional)
  9. Yang Chai (additional)
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Dates
Type When
Created 10 years, 4 months ago (April 13, 2015, 7:01 a.m.)
Deposited 1 year, 4 months ago (April 17, 2024, 1:50 p.m.)
Indexed 2 weeks, 3 days ago (Aug. 6, 2025, 9:14 a.m.)
Issued 10 years, 7 months ago (Jan. 1, 2015)
Published 10 years, 7 months ago (Jan. 1, 2015)
Published Online 10 years, 7 months ago (Jan. 1, 2015)
Funders 0

None

@article{Zhou_2015, title={Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT}, volume={7}, ISSN={2040-3372}, url={http://dx.doi.org/10.1039/c5nr01072a}, DOI={10.1039/c5nr01072a}, number={19}, journal={Nanoscale}, publisher={Royal Society of Chemistry (RSC)}, author={Zhou, Changjian and Wang, Xinsheng and Raju, Salahuddin and Lin, Ziyuan and Villaroman, Daniel and Huang, Baoling and Chan, Helen Lai-Wa and Chan, Mansun and Chai, Yang}, year={2015}, pages={8695–8700} }