DOI: 10.1039/c4ce01269k. Facile fabrication of graphene-topological insulator Bi<sub>2</sub>Se<sub>3</sub> hybrid Dirac materials via chemical vapor deposition in Se-rich conditions

Facile fabrication of graphene-topological insulator Bi2Se3 hybrid Dirac materials via chemical vapor deposition in Se-rich conditions

10.1039/c4ce01269k

Crossref journal-article

Royal Society of Chemistry (RSC)

CrystEngComm (292)

Abstract

Direct deposition of a uniform and high-quality Bi2Se3 thin film on a graphene film (layer controlled) is performed using a catalyst-free vapor deposition system in a Se-rich environment.

Bibliography

Zhang, C., Liu, M., Man, B. Y., Jiang, S. Z., Yang, C., Chen, C. S., Feng, D. J., Bi, D., Liu, F. Y., Qiu, H. W., & Zhang, J. X. (2014). Facile fabrication of graphene-topological insulator Bi2Se3 hybrid Dirac materials via chemical vapor deposition in Se-rich conditions. CrystEngComm, 16(38), 8941â8945.

Authors 11

C. Zhang (first)
M. Liu (additional)
B. Y. Man (additional)
S. Z. Jiang (additional)
C. Yang (additional)
C. S. Chen (additional)
D. J. Feng (additional)
D. Bi (additional)
F. Y. Liu (additional)
H. W. Qiu (additional)
J. X. Zhang (additional)

References 18 Referenced 25

10.1038/40369 / Nature by Terrones (1997)
10.1126/science.1171245 / Science by Li (2009)
10.1039/c3ce27029g / CrystEngComm by Xu (2013)
10.1021/nl901829a / Nano Lett. by Reina (2009)
10.1088/0957-4484/24/39/395603 / Nanotechnology by Zhang (2013)
10.1002/adfm.201202460 / Adv. Funct. Mater. by Chang (2013)
10.1021/la901402f / Langmuir by Wang (2009)
10.1016/j.apsusc.2011.06.017 / Appl. Surf. Sci. by Siokou (2011)
10.1039/C1CE06251D / CrystEngComm by Cheng (2012)
10.1088/0957-4484/23/11/112001 / Nanotechnology by Jo (2012)
10.1166/sam.2013.1466 / Sci. Adv. Mater. by Zhang (2013)
10.1016/j.apsusc.2011.07.015 / Appl. Surf. Sci. by Yuan (2011)
10.1021/nl100938e / Nano Lett. by Dang (2010)
10.1039/c2ce26678d / CrystEngComm by Xu (2013)
10.1088/0957-4484/23/30/305704 / Nanotechnology by Yan (2012)
10.1039/c3ce42056f / CrystEngComm by Han (2014)
10.1063/1.3494595 / Appl. Phys. Lett. by Song (2010)
10.1002/pssb.2220840226 / Phys. Status Solidi B by Richter (1977)

Dates

Type	When
Created	11 years ago (Aug. 6, 2014, 4:34 a.m.)
Deposited	1 year, 4 months ago (April 17, 2024, 12:47 p.m.)
Indexed	2 months, 2 weeks ago (June 16, 2025, 3:02 a.m.)
Issued	11 years, 8 months ago (Jan. 1, 2014)
Published	11 years, 8 months ago (Jan. 1, 2014)
Published Online	11 years, 8 months ago (Jan. 1, 2014)

Funders 0

None

BibTeX

@article{Zhang_2014, title={Facile fabrication of graphene-topological insulator Bi2Se3 hybrid Dirac materials via chemical vapor deposition in Se-rich conditions}, volume={16}, ISSN={1466-8033}, url={http://dx.doi.org/10.1039/c4ce01269k}, DOI={10.1039/c4ce01269k}, number={38}, journal={CrystEngComm}, publisher={Royal Society of Chemistry (RSC)}, author={Zhang, C. and Liu, M. and Man, B. Y. and Jiang, S. Z. and Yang, C. and Chen, C. S. and Feng, D. J. and Bi, D. and Liu, F. Y. and Qiu, H. W. and Zhang, J. X.}, year={2014}, pages={8941–8945} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        16
      ]
    ],
    "date-time": "2025-06-16T07:02:33Z",
    "timestamp": 1750057353324
  },
  "reference-count": 18,
  "publisher": "Royal Society of Chemistry (RSC)",
  "issue": "38",
  "content-domain": {
    "domain": [
      "rsc.org"
    ],
    "crossmark-restriction": true
  },
  "abstract": "<p>Direct deposition of a uniform and high-quality Bi<sub>2</sub>Se<sub>3</sub> thin film on a graphene film (layer controlled) is performed using a catalyst-free vapor deposition system in a Se-rich environment.</p>",
  "DOI": "10.1039/c4ce01269k",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2014,
        8,
        6
      ]
    ],
    "date-time": "2014-08-06T08:34:37Z",
    "timestamp": 1407314077000
  },
  "page": "8941-8945",
  "update-policy": "http://dx.doi.org/10.1039/rsc_crossmark_policy",
  "source": "Crossref",
  "is-referenced-by-count": 25,
  "title": "Facile fabrication of graphene-topological insulator Bi<sub>2</sub>Se<sub>3</sub> hybrid Dirac materials via chemical vapor deposition in Se-rich conditions",
  "prefix": "10.1039",
  "volume": "16",
  "author": [
    {
      "given": "C.",
      "family": "Zhang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "College of Physics and Electronics"
        },
        {
          "name": "Shandong Normal University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    },
    {
      "given": "M.",
      "family": "Liu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "College of Physics and Electronics"
        },
        {
          "name": "Shandong Normal University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    },
    {
      "given": "B. Y.",
      "family": "Man",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "College of Physics and Electronics"
        },
        {
          "name": "Shandong Normal University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    },
    {
      "given": "S. Z.",
      "family": "Jiang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "College of Physics and Electronics"
        },
        {
          "name": "Shandong Normal University"
        },
        {
          "name": "Jinan, People's Republic of China"
        },
        {
          "name": "State Key Lab of Crystal Materials Shandong University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    },
    {
      "given": "C.",
      "family": "Yang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "College of Physics and Electronics"
        },
        {
          "name": "Shandong Normal University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    },
    {
      "given": "C. S.",
      "family": "Chen",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "College of Physics and Electronics"
        },
        {
          "name": "Shandong Normal University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    },
    {
      "given": "D. J.",
      "family": "Feng",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "School of Information Science and Engineering"
        },
        {
          "name": "Shandong University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Bi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "College of Physics and Electronics"
        },
        {
          "name": "Shandong Normal University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    },
    {
      "given": "F. Y.",
      "family": "Liu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "College of Physics and Electronics"
        },
        {
          "name": "Shandong Normal University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    },
    {
      "given": "H. W.",
      "family": "Qiu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "College of Physics and Electronics"
        },
        {
          "name": "Shandong Normal University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    },
    {
      "given": "J. X.",
      "family": "Zhang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "College of Physics and Electronics"
        },
        {
          "name": "Shandong Normal University"
        },
        {
          "name": "Jinan, People's Republic of China"
        }
      ]
    }
  ],
  "member": "292",
  "published-online": {
    "date-parts": [
      [
        2014
      ]
    ]
  },
  "reference": [
    {
      "key": "C4CE01269K-(cit1)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "52",
      "DOI": "10.1038/40369",
      "volume": "388",
      "author": "Terrones",
      "year": "1997",
      "journal-title": "Nature"
    },
    {
      "key": "C4CE01269K-(cit2)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "1312",
      "DOI": "10.1126/science.1171245",
      "volume": "324",
      "author": "Li",
      "year": "2009",
      "journal-title": "Science"
    },
    {
      "issue": "10",
      "key": "C4CE01269K-(cit3)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "1840",
      "DOI": "10.1039/c3ce27029g",
      "volume": "15",
      "author": "Xu",
      "year": "2013",
      "journal-title": "CrystEngComm"
    },
    {
      "issue": "8",
      "key": "C4CE01269K-(cit4)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "3087",
      "DOI": "10.1021/nl901829a",
      "volume": "9",
      "author": "Reina",
      "year": "2009",
      "journal-title": "Nano Lett."
    },
    {
      "key": "C4CE01269K-(cit5)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "395603",
      "DOI": "10.1088/0957-4484/24/39/395603",
      "volume": "24",
      "author": "Zhang",
      "year": "2013",
      "journal-title": "Nanotechnology"
    },
    {
      "issue": "16",
      "key": "C4CE01269K-(cit6)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "1984",
      "DOI": "10.1002/adfm.201202460",
      "volume": "23",
      "author": "Chang",
      "year": "2013",
      "journal-title": "Adv. Funct. Mater."
    },
    {
      "issue": "18",
      "key": "C4CE01269K-(cit7)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "11078",
      "DOI": "10.1021/la901402f",
      "volume": "25",
      "author": "Wang",
      "year": "2009",
      "journal-title": "Langmuir"
    },
    {
      "issue": "23",
      "key": "C4CE01269K-(cit8)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "9785",
      "DOI": "10.1016/j.apsusc.2011.06.017",
      "volume": "257",
      "author": "Siokou",
      "year": "2011",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "issue": "2",
      "key": "C4CE01269K-(cit9)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "397",
      "DOI": "10.1039/C1CE06251D",
      "volume": "14",
      "author": "Cheng",
      "year": "2012",
      "journal-title": "CrystEngComm"
    },
    {
      "issue": "11",
      "key": "C4CE01269K-(cit10)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "112001",
      "DOI": "10.1088/0957-4484/23/11/112001",
      "volume": "23",
      "author": "Jo",
      "year": "2012",
      "journal-title": "Nanotechnology"
    },
    {
      "issue": "4",
      "key": "C4CE01269K-(cit11)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "366",
      "DOI": "10.1166/sam.2013.1466",
      "volume": "5",
      "author": "Zhang",
      "year": "2013",
      "journal-title": "Sci. Adv. Mater."
    },
    {
      "issue": "23",
      "key": "C4CE01269K-(cit12)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "10183",
      "DOI": "10.1016/j.apsusc.2011.07.015",
      "volume": "257",
      "author": "Yuan",
      "year": "2011",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "issue": "8",
      "key": "C4CE01269K-(cit13)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "2870",
      "DOI": "10.1021/nl100938e",
      "volume": "10",
      "author": "Dang",
      "year": "2010",
      "journal-title": "Nano Lett."
    },
    {
      "issue": "8",
      "key": "C4CE01269K-(cit14)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "1618",
      "DOI": "10.1039/c2ce26678d",
      "volume": "15",
      "author": "Xu",
      "year": "2013",
      "journal-title": "CrystEngComm"
    },
    {
      "issue": "30",
      "key": "C4CE01269K-(cit15)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "305704",
      "DOI": "10.1088/0957-4484/23/30/305704",
      "volume": "23",
      "author": "Yan",
      "year": "2012",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "C4CE01269K-(cit16)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "2823",
      "DOI": "10.1039/c3ce42056f",
      "volume": "16",
      "author": "Han",
      "year": "2014",
      "journal-title": "CrystEngComm"
    },
    {
      "issue": "14",
      "key": "C4CE01269K-(cit17)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "143118",
      "DOI": "10.1063/1.3494595",
      "volume": "97",
      "author": "Song",
      "year": "2010",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "2",
      "key": "C4CE01269K-(cit18)/*[position()=1]",
      "doi-asserted-by": "crossref",
      "first-page": "619",
      "DOI": "10.1002/pssb.2220840226",
      "volume": "84",
      "author": "Richter",
      "year": "1977",
      "journal-title": "Phys. Status Solidi B"
    }
  ],
  "container-title": "CrystEngComm",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE01269K",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        4,
        17
      ]
    ],
    "date-time": "2024-04-17T16:47:07Z",
    "timestamp": 1713372427000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://xlink.rsc.org/?DOI=C4CE01269K"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2014
      ]
    ]
  },
  "references-count": 18,
  "journal-issue": {
    "issue": "38",
    "published-print": {
      "date-parts": [
        [
          2014
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1039/C4CE01269K",
  "relation": {},
  "ISSN": [
    "1466-8033"
  ],
  "subject": [],
  "container-title-short": "CrystEngComm",
  "published": {
    "date-parts": [
      [
        2014
      ]
    ]
  },
  "assertion": [
    {
      "value": "This document is CrossCheck deposited",
      "name": "crosscheck",
      "explanation": {
        "URL": "http://www.crossref.org/crosscheck/index.html"
      },
      "group": {
        "name": "crosscheck",
        "label": "CROSSCHECK"
      }
    },
    {
      "value": "The Royal Society of Chemistry has an exclusive publication licence for this journal",
      "name": "copyright_licence",
      "group": {
        "name": "copyright_licensing",
        "label": "COPYRIGHT AND LICENSING"
      }
    },
    {
      "value": "The accepted version of this article will be made freely available after a 12 month embargo period",
      "name": "copyright_licence",
      "label": "OPEN ACCESS",
      "group": {
        "name": "copyright_licensing",
        "label": "COPYRIGHT AND LICENSING"
      }
    },
    {
      "value": "Received 21 June 2014; Accepted 5 August 2014;  Accepted Manuscript published 6 August 2014;  Advance Article published 18 August 2014;  Version of Record published 8 September 2014",
      "order": 1,
      "name": "history",
      "group": {
        "name": "publication_history",
        "label": "PUBLICATION HISTORY"
      }
    }
  ]
}