DOI: 10.1038/srep14115. Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe

Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe

10.1038/srep14115

Crossref journal-article

Springer Science and Business Media LLC

Scientific Reports (297)

Abstract

AbstractTwo-dimensional (2D) topological insulators (TIs) with large band gaps are of great importance for the future applications of quantum spin Hall (QSH) effect. Employing ab initio electronic calculations we propose a novel type of 2D topological insulators, the monolayer (ML) low-buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gap. We demonstrate that LB HgTe (HgSe) monolayers undergo a trivial insulator to topological insulator transition under in-plane tensile strain of 2.6% (3.1%) due to the combination of the strain and the spin orbital coupling (SOC) effects. Furthermore, the band gaps can be tuned up to large values (0.2 eV for HgTe and 0.05 eV for HgSe) by tensile strain, which far exceed those of current experimentally realized 2D quantum spin Hall insulators. Our results suggest a new type of material suitable for practical applications of 2D TI at room-temperature.

Bibliography

Li, J., He, C., Meng, L., Xiao, H., Tang, C., Wei, X., Kim, J., Kioussis, N., Malcolm Stocks, G., & Zhong, J. (2015). Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe. Scientific Reports, 5(1).

Authors 10

Jin Li (first)
Chaoyu He (additional)
Lijun Meng (additional)
Huaping Xiao (additional)
Chao Tang (additional)
Xiaolin Wei (additional)
Jinwoong Kim (additional)
Nicholas Kioussis (additional)
G. Malcolm Stocks (additional)
Jianxin Zhong (additional)

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Dates

Type	When
Created	9 years, 11 months ago (Sept. 14, 2015, 5:58 a.m.)
Deposited	2 years, 7 months ago (Jan. 5, 2023, 7:17 p.m.)
Indexed	1 week, 6 days ago (Aug. 19, 2025, 6:13 a.m.)
Issued	9 years, 11 months ago (Sept. 14, 2015)
Published	9 years, 11 months ago (Sept. 14, 2015)
Published Online	9 years, 11 months ago (Sept. 14, 2015)

Funders 0

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BibTeX

@article{Li_2015, title={Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe}, volume={5}, ISSN={2045-2322}, url={http://dx.doi.org/10.1038/srep14115}, DOI={10.1038/srep14115}, number={1}, journal={Scientific Reports}, publisher={Springer Science and Business Media LLC}, author={Li, Jin and He, Chaoyu and Meng, Lijun and Xiao, Huaping and Tang, Chao and Wei, Xiaolin and Kim, Jinwoong and Kioussis, Nicholas and Malcolm Stocks, G. and Zhong, Jianxin}, year={2015}, month=sep }

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  "abstract": "<jats:title>Abstract</jats:title><jats:p>Two-dimensional (2D) topological insulators (TIs) with large band gaps are of great importance for the future applications of quantum spin Hall (QSH) effect. Employing <jats:italic>ab initio</jats:italic> electronic calculations we propose a novel type of 2D topological insulators, the monolayer (ML) low-buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gap. We demonstrate that LB HgTe (HgSe) monolayers undergo a trivial insulator to topological insulator transition under in-plane tensile strain of 2.6% (3.1%) due to the combination of the strain and the spin orbital coupling (SOC) effects. Furthermore, the band gaps can be tuned up to large values (0.2\u2009eV for HgTe and 0.05\u2009eV for HgSe) by tensile strain, which far exceed those of current experimentally realized 2D quantum spin Hall insulators. Our results suggest a new type of material suitable for practical applications of 2D TI at room-temperature.</jats:p>",
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