DOI: 10.1038/srep13743. Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors

10.1038/srep13743

Crossref journal-article

Springer Science and Business Media LLC

Scientific Reports (297)

Abstract

AbstractWe fabricated multi-layered graphene/MoS2heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2onto Au metal pads on a SiO2/Si substrateviaa contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2junction devices for systematic comparison. A previous work has demonstrated the existence of a positive Schottky barrier height (SBH) in the metal/MoS2system. However, analysis of the SBH indicates that the contacts of the multi-layered graphene/MoS2have tunable negative barriers in the range of 300 to −46 meV as a function of gate voltage. It is hypothesized that this tunable SBH is responsible for the modulation of the work function of the thick graphene in these devices. Despite the large number of graphene layers, it is possible to form ohmic contacts, which will provide new opportunities for the engineering of highly efficient contacts in flexible electronics and photonics.

Bibliography

Qiu, D., & Kim, E. K. (2015). Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors. Scientific Reports, 5(1).

Authors 2

Dongri Qiu (first)
Eun Kyu Kim (additional)

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Dates

Type	When
Created	9 years, 11 months ago (Sept. 3, 2015, 7:03 a.m.)
Deposited	1 year, 2 months ago (June 10, 2024, 6:22 p.m.)
Indexed	3 weeks ago (Aug. 6, 2025, 8:45 a.m.)
Issued	9 years, 11 months ago (Sept. 3, 2015)
Published	9 years, 11 months ago (Sept. 3, 2015)
Published Online	9 years, 11 months ago (Sept. 3, 2015)

Funders 0

None

BibTeX

@article{Qiu_2015, title={Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors}, volume={5}, ISSN={2045-2322}, url={http://dx.doi.org/10.1038/srep13743}, DOI={10.1038/srep13743}, number={1}, journal={Scientific Reports}, publisher={Springer Science and Business Media LLC}, author={Qiu, Dongri and Kim, Eun Kyu}, year={2015}, month=sep }

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