Crossref
journal-article
Springer Science and Business Media LLC
Scientific Reports (297)
References
39
Referenced
344
-
Voiry, D. et al. Conducting MoS2 nanosheets as catalysts for hydrogen evolution reaction. Nano Lett. 13, 6222–6227 (2013).
(
10.1021/nl403661s
) / Nano Lett. by D Voiry (2013) - Ataca, C. & Ciraci, S. Dissociation of H2O at the vacancies of single-layer MoS2 . Phys. Rev. B 10.1103/PhysRevB.85.195410 (2012).
-
Kibsgaard, J., Chen, Z., Reinecke, B. N. & Jaramillo, T. F. Engineering the surface structure of MoS2 to preferentially expose active edge sites for electrocatalysis. Nat. Mater. 11, 963–969 (2012).
(
10.1038/nmat3439
) / Nat. Mater. by J Kibsgaard (2012) -
Zong, X. et al. Enhancement of photocatalytic H2 evolution on CdS by loading MoS2 as cocatalyst under visible light irradiation. J. Am. Chem. Soc. 130, 7176–7177 (2008).
(
10.1021/ja8007825
) / J. Am. Chem. Soc. by X Zong (2008) -
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotech. 6, 147–150 (2011).
(
10.1038/nnano.2010.279
) / Nat. Nanotech. by B Radisavljevic (2011) -
Radisavljevic, B., Whitwick, M. B. & Kis, A. Integrated circuits and logic operations based on single-layer MoS2 . ACS Nano 5, 9934–9938 (2011).
(
10.1021/nn203715c
) / ACS Nano by B Radisavljevic (2011) -
Nam, H. et al. MoS2 transistors fabricated via plasma-assisted nanoprinting of few-layer MoS2 flakes into large-area arrays. ACS Nano 7, 5870–5881 (2013).
(
10.1021/nn401093u
) / ACS Nano by H Nam (2013) -
Zhou, G. et al. A graphene–pure-sulfur sandwich structure for ultrafast, long-life lithium–sulfur batteries. Adv. Mater. 26, 625–631 (2014).
(
10.1002/adma.201302877
) / Adv. Mater. by G Zhou (2014) -
Cao, X. et al. Preparation of MoS2-coated three-dimensional graphene networks for high-performance anode material in lithium-ion batteries. Small 9, 3433–3438 (2013).
(
10.1002/smll.201202697
) / Small by X Cao (2013) -
Late, D. J. et al. Sensing behavior of atomically thin-layered MoS2 transistors. ACS Nano 7, 4879–4891 (2013).
(
10.1021/nn400026u
) / ACS Nano by DJ Late (2013) -
Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A. & Kis, A. Ultrasensitive photodetectors based on monolayer MoS2 . Nat. Nanotech. 8, 497–501 (2013).
(
10.1038/nnano.2013.100
) / Nat. Nanotech. by O Lopez-Sanchez (2013) -
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotech. 7, 699–712 (2012).
(
10.1038/nnano.2012.193
) / Nat. Nanotech. by QH Wang (2012) -
Kam, K. K. & Parklnclon, B. A. Detailed photocurrent spectroscopy of the semiconducting group transition metal dichalcogenides. J. Phys. Chem. 86, 463–467 (1982).
(
10.1021/j100393a010
) / J. Phys. Chem. by KK Kam (1982) - Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 10.1103/PhysRevLett.105.136805 (2010).
-
Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271–1275 (2010).
(
10.1021/nl903868w
) / Nano Lett. by A Splendiani (2010) -
Fivaz, R. & Mooser, E. Mobility of charge carriers in semiconducting layer structures. Phys. Rev. 163, 743–755 (1967).
(
10.1103/PhysRev.163.743
) / Phys. Rev. by R Fivaz (1967) -
Bertolazzi, S., Brivio, J. & Kis, A. Stretching and breaking of ultrathin MoS2 . ACS Nano 5, 9703–9709 (2011).
(
10.1021/nn203879f
) / ACS Nano by S Bertolazzi (2011) -
Lee, H. S. et al. MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 12, 3695–3700 (2012).
(
10.1021/nl301485q
) / Nano Lett. by HS Lee (2012) -
Yu, Y. et al. Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci. Rep. 10.1038/srep01866 (2013).
(
10.1038/srep01866
) -
Zande, A. M. et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 12, 554–561 (2013).
(
10.1038/nmat3633
) / Nat. Mater. by AM Zande (2013) -
Conley, H. J. et al. Bandgap engineering of strained monolayer and bilayer MoS2 . Nano Lett. 13, 3626–3630 (2013).
(
10.1021/nl4014748
) / Nano Lett. by HJ Conley (2013) -
He, K., Poole, C., Mak, K. F. & Shan, J. Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2 . Nano Lett. 13, 2931–2936 (2013).
(
10.1021/nl4013166
) / Nano Lett. by K He (2013) -
Hui, Y. Y. et al. Exceptional tenability of band energy in a compressively strained trilayer MoS2 sheet. ACS Nano 7, 7126–7131 (2013).
(
10.1021/nn4024834
) / ACS Nano by YY Hui (2013) -
Castellanos-Gomez, A. et al. Local strain engineering in atomically thin MoS2 . Nano Lett. 13, 5361–5366 (2013).
(
10.1021/nl402875m
) / Nano Lett. by A Castellanos-Gomez (2013) - Rice, C., Young, R. J., Zan, R. & Bangert, U. Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2 . Phys. Rev. B 10.1103/PhysRevB.87.081307 (2013).
- Kittel, C. Introduction to Solid State Physics Ch.2, 38–39 (John Wiley & Sons, Inc., New York London, 1968).
-
Liu, Y. et al. Layer-by-layer thinning of MoS2 by plasma. ACS Nano 7, 4202–4209 (2013).
(
10.1021/nn400644t
) / ACS Nano by Y Liu (2013) -
Wang, X., Feng, H., Wu, Y. & Jiao, L. Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. J. Am. Chem. Soc. 135, 5304–5307 (2013).
(
10.1021/ja4013485
) / J. Am. Chem. Soc. by X Wang (2013) - Kuc, A., Zibouche, N. & Heine, T. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2 . Phys. Rev. B 10.1103/PhysRevB.83.245213 (2011).
-
Mohiuddin, T. M. G. et al. Uniaxial strain in graphene by raman spectroscopy: G peak splitting, Grüneisen parameters and sample orientation. Phys. Rev. B 79, 205433–205440 (2009).
(
10.1103/PhysRevB.79.205433
) / Phys. Rev. B by TMG Mohiuddin (2009) -
Ghosh, P. N. & Maiti, C. R. Interlayer force and Davydov splitting in 2H-MoS2 . Phys. Rev. B 28, 2237–2239 (1983).
(
10.1103/PhysRevB.28.2237
) / Phys. Rev. B by PN Ghosh (1983) - Molina-Sánchez, A. & Wirtz, L. Phonons in single-layer and few-layer MoS2 and WS2 . Phys. Rev. B 10.1103/PhysRevB.84.155413 (2011).
-
Li, T. & Galli, G. Electronic properties of MoS2 nanoparticles. J. Phys. Chem. C 111, 16192–16196 (2007).
(
10.1021/jp075424v
) / J. Phys. Chem. C by T Li (2007) -
Lee, C. et al. Anomalous lattice vibrations of single and few layer MoS2 . ACS Nano 4, 2695–2700 (2010).
(
10.1021/nn1003937
) / ACS Nano by C Lee (2010) -
Kuroda, N. & Nishina, Y. Davydov splitting of degenerate lattice modes in the layer compound GaS. Phys. Rev. B 19, 1312–1315 (1979).
(
10.1103/PhysRevB.19.1312
) / Phys. Rev. B by N Kuroda (1979) -
Scalise, E., Houssa, M., Pourtois, G., Afanas'ev, V. & Stesmans, A. Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 . Nano Res. 5, 43–48 (2012).
(
10.1007/s12274-011-0183-0
) / Nano Res. by E Scalise (2012) -
Peelaers, H. & Van de Walle, C. G. Effects of strain on band structure and effective masses in MoS2 . Phys. Rev. B 86, 241401–241405 (2012).
(
10.1103/PhysRevB.86.241401
) / Phys. Rev. B by H Peelaers (2012) -
Lebègue, S. & Eriksson, O. Electronic structure of two-dimensional crystals from ab initio theory. Phys. Rev. B 79, 115409–115412 (2009).
(
10.1103/PhysRevB.79.115409
) / Phys. Rev. B by S Lebègue (2009) -
Tongay, S. et al. Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2 . Nano lett. 12, 5576–5580 (2012).
(
10.1021/nl302584w
) / Nano lett. by S Tongay (2012)
Dates
Type | When |
---|---|
Created | 11 years, 1 month ago (July 10, 2014, 5:19 a.m.) |
Deposited | 2 years, 7 months ago (Jan. 6, 2023, 3:04 a.m.) |
Indexed | 1 day, 2 hours ago (Aug. 20, 2025, 8:25 a.m.) |
Issued | 11 years, 1 month ago (July 10, 2014) |
Published | 11 years, 1 month ago (July 10, 2014) |
Published Online | 11 years, 1 month ago (July 10, 2014) |
@article{Yang_2014, title={Lattice strain effects on the optical properties of MoS2 nanosheets}, volume={4}, ISSN={2045-2322}, url={http://dx.doi.org/10.1038/srep05649}, DOI={10.1038/srep05649}, number={1}, journal={Scientific Reports}, publisher={Springer Science and Business Media LLC}, author={Yang, Lei and Cui, Xudong and Zhang, Jingyu and Wang, Kan and Shen, Meng and Zeng, Shuangshuang and Dayeh, Shadi A. and Feng, Liang and Xiang, Bin}, year={2014}, month=jul }