Interfacial ferroelectricity in marginally twisted 2D semiconductors
10.1038/s41565-022-01072-w
Crossref journal-article
Springer Science and Business Media LLC
Nature Nanotechnology (297)
Abstract

AbstractTwisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarization arranged into a twist-controlled network. The last can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The observed interfacial charge transfer, movement of domain walls and their bending rigidity agree well with theoretical calculations. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential avenue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.

Bibliography

Weston, A., Castanon, E. G., Enaldiev, V., Ferreira, F., Bhattacharjee, S., Xu, S., Corte-León, H., Wu, Z., Clark, N., Summerfield, A., Hashimoto, T., Gao, Y., Wang, W., Hamer, M., Read, H., Fumagalli, L., Kretinin, A. V., Haigh, S. J., Kazakova, O., … Gorbachev, R. (2022). Interfacial ferroelectricity in marginally twisted 2D semiconductors. Nature Nanotechnology, 17(4), 390–395.

Authors 22
  1. Astrid Weston (first)
  2. Eli G. Castanon (additional)
  3. Vladimir Enaldiev (additional)
  4. Fábio Ferreira (additional)
  5. Shubhadeep Bhattacharjee (additional)
  6. Shuigang Xu (additional)
  7. Héctor Corte-León (additional)
  8. Zefei Wu (additional)
  9. Nicholas Clark (additional)
  10. Alex Summerfield (additional)
  11. Teruo Hashimoto (additional)
  12. Yunze Gao (additional)
  13. Wendong Wang (additional)
  14. Matthew Hamer (additional)
  15. Harriet Read (additional)
  16. Laura Fumagalli (additional)
  17. Andrey V. Kretinin (additional)
  18. Sarah J. Haigh (additional)
  19. Olga Kazakova (additional)
  20. A. K. Geim (additional)
  21. Vladimir I. Fal’ko (additional)
  22. Roman Gorbachev (additional)
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Dates
Type When
Created 3 years, 5 months ago (Feb. 24, 2022, 12:03 p.m.)
Deposited 3 years, 4 months ago (April 19, 2022, 11:32 a.m.)
Indexed 43 minutes ago (Aug. 21, 2025, 6:11 a.m.)
Issued 3 years, 5 months ago (Feb. 24, 2022)
Published 3 years, 5 months ago (Feb. 24, 2022)
Published Online 3 years, 5 months ago (Feb. 24, 2022)
Published Print 3 years, 4 months ago (April 1, 2022)
Funders 0

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@article{Weston_2022, title={Interfacial ferroelectricity in marginally twisted 2D semiconductors}, volume={17}, ISSN={1748-3395}, url={http://dx.doi.org/10.1038/s41565-022-01072-w}, DOI={10.1038/s41565-022-01072-w}, number={4}, journal={Nature Nanotechnology}, publisher={Springer Science and Business Media LLC}, author={Weston, Astrid and Castanon, Eli G. and Enaldiev, Vladimir and Ferreira, Fábio and Bhattacharjee, Shubhadeep and Xu, Shuigang and Corte-León, Héctor and Wu, Zefei and Clark, Nicholas and Summerfield, Alex and Hashimoto, Teruo and Gao, Yunze and Wang, Wendong and Hamer, Matthew and Read, Harriet and Fumagalli, Laura and Kretinin, Andrey V. and Haigh, Sarah J. and Kazakova, Olga and Geim, A. K. and Fal’ko, Vladimir I. and Gorbachev, Roman}, year={2022}, month=feb, pages={390–395} }