Van der Waals negative capacitance transistors
10.1038/s41467-019-10738-4
Crossref journal-article
Springer Science and Business Media LLC
Nature Communications (297)
Abstract

AbstractThe Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging FET architecture, is promising to overcome this thermionic limit and build ultra-low-power consuming electronics. Here, we demonstrate steep-slope NC-FETs based on two-dimensional molybdenum disulfide and CuInP2S6 (CIPS) van der Waals (vdW) heterostructure. The vdW NC-FET provides an average subthreshold swing (SS) less than the Boltzmann’s limit for over seven decades of drain current, with a minimum SS of 28 mV dec−1. Negligible hysteresis is achieved in NC-FETs with the thickness of CIPS less than 20 nm. A voltage gain of 24 is measured for vdW NC-FET logic inverter. Flexible vdW NC-FET is further demonstrated with sub-60 mV dec−1 switching characteristics under the bending radius down to 3.8 mm. These results demonstrate the great potential of vdW NC-FET for ultra-low-power and flexible applications.

Bibliography

Wang, X., Yu, P., Lei, Z., Zhu, C., Cao, X., Liu, F., You, L., Zeng, Q., Deng, Y., Zhu, C., Zhou, J., Fu, Q., Wang, J., Huang, Y., & Liu, Z. (2019). Van der Waals negative capacitance transistors. Nature Communications, 10(1).

Authors 15
  1. Xiaowei Wang (first)
  2. Peng Yu (additional)
  3. Zhendong Lei (additional)
  4. Chao Zhu (additional)
  5. Xun Cao (additional)
  6. Fucai Liu (additional)
  7. Lu You (additional)
  8. Qingsheng Zeng (additional)
  9. Ya Deng (additional)
  10. Chao Zhu (additional)
  11. Jiadong Zhou (additional)
  12. Qundong Fu (additional)
  13. Junling Wang (additional)
  14. Yizhong Huang (additional)
  15. Zheng Liu (additional)
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Dates
Type When
Created 6 years, 1 month ago (July 10, 2019, 6:03 a.m.)
Deposited 2 years, 8 months ago (Dec. 16, 2022, 7:17 p.m.)
Indexed 2 weeks, 1 day ago (Aug. 5, 2025, 8:32 a.m.)
Issued 6 years, 1 month ago (July 10, 2019)
Published 6 years, 1 month ago (July 10, 2019)
Published Online 6 years, 1 month ago (July 10, 2019)
Funders 2
  1. National Research Foundation Singapore 10.13039/501100001381

    Region: Asia

    gov (National government)

    Labels8
    1. National Research Foundation-Prime Minister's office, Republic of Singapore
    2. Singapore National Research Foundation
    3. National Research Foundation of Singapore
    4. National Research Foundation, Singapore
    5. National Research Foundation, Singapore (NRF)
    6. nrfsg
    7. NRF Singapore
    8. NRF
    Awards1
    1. NRF-RF2013-08
  2. A*STAR | Institute of Materials Research and Engineering 10.13039/501100001453 Institute of Materials Research and Engineering

    Region: Asia

    pri (For-profit companies (industry))

    Labels4
    1. Institute of Materials Research and Engineering - A STAR
    2. Institute of Materials Research and Engineering - A*STAR
    3. A*STAR Institute of Materials Research and Engineering
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    Awards1
    1. QTE programme

@article{Wang_2019, title={Van der Waals negative capacitance transistors}, volume={10}, ISSN={2041-1723}, url={http://dx.doi.org/10.1038/s41467-019-10738-4}, DOI={10.1038/s41467-019-10738-4}, number={1}, journal={Nature Communications}, publisher={Springer Science and Business Media LLC}, author={Wang, Xiaowei and Yu, Peng and Lei, Zhendong and Zhu, Chao and Cao, Xun and Liu, Fucai and You, Lu and Zeng, Qingsheng and Deng, Ya and Zhu, Chao and Zhou, Jiadong and Fu, Qundong and Wang, Junling and Huang, Yizhong and Liu, Zheng}, year={2019}, month=jul }