Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
10.1038/s41467-018-04953-8
Crossref journal-article
Springer Science and Business Media LLC
Nature Communications (297)
Abstract

AbstractMagnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report magneto-transport measurements on exfoliated CrI3 crystals. We find that tunneling conduction in the direction perpendicular to the crystalline planes exhibits a magnetoresistance as large as 10,000%. The evolution of the magnetoresistance with magnetic field and temperature reveals that the phenomenon originates from multiple transitions to different magnetic states, whose possible microscopic nature is discussed on the basis of all existing experimental observations. This observed dependence of the conductance of a tunnel barrier on its magnetic state is a phenomenon that demonstrates the presence of a strong coupling between transport and magnetism in magnetic van der Waals semiconductors.

Bibliography

Wang, Z., Gutiérrez-Lezama, I., Ubrig, N., Kroner, M., Gibertini, M., Taniguchi, T., Watanabe, K., Imamoğlu, A., Giannini, E., & Morpurgo, A. F. (2018). Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3. Nature Communications, 9(1).

Authors 10
  1. Zhe Wang (first)
  2. Ignacio Gutiérrez-Lezama (additional)
  3. Nicolas Ubrig (additional)
  4. Martin Kroner (additional)
  5. Marco Gibertini (additional)
  6. Takashi Taniguchi (additional)
  7. Kenji Watanabe (additional)
  8. Ataç Imamoğlu (additional)
  9. Enrico Giannini (additional)
  10. Alberto F. Morpurgo (additional)
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Dates
Type When
Created 7 years, 2 months ago (June 22, 2018, 6:19 a.m.)
Deposited 2 years, 8 months ago (Dec. 20, 2022, 10:07 a.m.)
Indexed 4 days, 6 hours ago (Aug. 21, 2025, 12:33 p.m.)
Issued 7 years, 1 month ago (June 28, 2018)
Published 7 years, 1 month ago (June 28, 2018)
Published Online 7 years, 1 month ago (June 28, 2018)
Funders 0

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@article{Wang_2018, title={Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3}, volume={9}, ISSN={2041-1723}, url={http://dx.doi.org/10.1038/s41467-018-04953-8}, DOI={10.1038/s41467-018-04953-8}, number={1}, journal={Nature Communications}, publisher={Springer Science and Business Media LLC}, author={Wang, Zhe and Gutiérrez-Lezama, Ignacio and Ubrig, Nicolas and Kroner, Martin and Gibertini, Marco and Taniguchi, Takashi and Watanabe, Kenji and Imamoğlu, Ataç and Giannini, Enrico and Morpurgo, Alberto F.}, year={2018}, month=jun }