Bandgap opening in few-layered monoclinic MoTe2
10.1038/nphys3314
Crossref journal-article
Springer Science and Business Media LLC
Nature Physics (297)
Bibliography

Keum, D. H., Cho, S., Kim, J. H., Choe, D.-H., Sung, H.-J., Kan, M., Kang, H., Hwang, J.-Y., Kim, S. W., Yang, H., Chang, K. J., & Lee, Y. H. (2015). Bandgap opening in few-layered monoclinic MoTe2. Nature Physics, 11(6), 482–486.

Authors 12
  1. Dong Hoon Keum (first)
  2. Suyeon Cho (additional)
  3. Jung Ho Kim (additional)
  4. Duk-Hyun Choe (additional)
  5. Ha-Jun Sung (additional)
  6. Min Kan (additional)
  7. Haeyong Kang (additional)
  8. Jae-Yeol Hwang (additional)
  9. Sung Wng Kim (additional)
  10. Heejun Yang (additional)
  11. K. J. Chang (additional)
  12. Young Hee Lee (additional)
References 30 Referenced 904
  1. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nature Chem. 5, 263–275 (2013). (10.1038/nchem.1589) / Nature Chem. by M Chhowalla (2013)
  2. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotech. 6, 147–150 (2011). (10.1038/nnano.2010.279) / Nature Nanotech. by B Radisavljevic (2011)
  3. Revolinsky, E. & Beerntsen, D. Electrical properties of the MoTe2–WTe2 and MoSe2–WSe2 systems. J. Appl. Phys. 35, 2086–2089 (1964). (10.1063/1.1702795) / J. Appl. Phys. by E Revolinsky (1964)
  4. Eda, G. et al. Coherent atomic and electronic heterostructures of single-layer MoS2 . ACS Nano 6, 7311–7317 (2012). (10.1021/nn302422x) / ACS Nano by G Eda (2012)
  5. Eda, G. et al. Photoluminescence from chemically exfoliated MoS2 . Nano Lett. 11, 5111–5116 (2011). (10.1021/nl201874w) / Nano Lett. by G Eda (2011)
  6. Lin, Y-C., Dumcenco, D. O., Huang, Y-S. & Suenaga, K. Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 . Nature Nanotech. 9, 391–396 (2014). (10.1038/nnano.2014.64) / Nature Nanotech. by Y-C Lin (2014)
  7. Qian, X., Liu, J., Fu, L. & Li, J. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides. Science 346, 1344–1347 (2014). (10.1126/science.1256815) / Science by X Qian (2014)
  8. Lin, Y-F. et al. Ambipolar MoTe2 transistors and their applications in logic circuits. Adv. Mater. 26, 3263–3269 (2014). (10.1002/adma.201305845) / Adv. Mater. by Y-F Lin (2014)
  9. Suzuki, R. et al. Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry. Nature Nanotech. 9, 611–617 (2014). (10.1038/nnano.2014.148) / Nature Nanotech. by R Suzuki (2014)
  10. Pradhan, N. R. et al. Field-effect transistors based on few-layered α-MoTe2 . ACS Nano 8, 5911–5920 (2014). (10.1021/nn501013c) / ACS Nano by NR Pradhan (2014)
  11. Shen, D. W. et al. Novel mechanism of a charge density wave in a transition metal dichalcogenide. Phys. Rev. Lett. 99, 216404 (2007). (10.1103/PhysRevLett.99.216404) / Phys. Rev. Lett. by DW Shen (2007)
  12. Ye, J. T. et al. Superconducting dome in a gate-tuned band insulator. Science 338, 1193–1196 (2012). (10.1126/science.1228006) / Science by JT Ye (2012)
  13. Zhang, Y. J., Oka, T., Suzuki, R., Ye, J. T. & Iwasa, Y. Electrically switchable chiral light-emitting transistor. Science 344, 725–728 (2014). (10.1126/science.1251329) / Science by YJ Zhang (2014)
  14. Vellinga, M. B., Jonge, R. & Haas, C. Semiconductor to metal transition in MoTe2 . J. Solid State Chem. 2, 299–302 (1970). (10.1016/0022-4596(70)90085-X) / J. Solid State Chem. by MB Vellinga (1970)
  15. Ali, M. N. et al. Large, non-saturating magnetoresistance in WTe2 . Nature 514, 205–208 (2014). (10.1038/nature13763) / Nature by MN Ali (2014)
  16. Zandt, T., Dwelk, H., Janowitz, C. & Manzke, R. Quadratic temperature dependence up to 50 K of the resistivity of metallic MoTe2 . J. Alloys Compd. 442, 216–218 (2007). (10.1016/j.jallcom.2006.09.157) / J. Alloys Compd. by T Zandt (2007)
  17. Albert, M., Kershaw, R., Dwight, K. & Wold, A. Preparation and characterization of semiconducting α-MoTe2 single crystals. Solid State Commun. 81, 649–651 (1992). (10.1016/0038-1098(92)90613-E) / Solid State Commun. by M Albert (1992)
  18. Enyashin, A. N. et al. New route for stabilization of 1T-WS2 and MoS2 phases. J. Phys. Chem. C 115, 24586–24591 (2011). (10.1021/jp2076325) / J. Phys. Chem. C by AN Enyashin (2011)
  19. Brewer, L. & Lamoreaux, R. H. Mo–Te Phase Diagram, ASM Alloy Phase Diagram Database (ASM International, 2006); http://www1.asminternational.org/AsmEnterprise/APD / Mo–Te Phase Diagram, ASM Alloy Phase Diagram Database by L Brewer (2006)
  20. Yamamoto, M. et al. Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe2 . ACS Nano 8, 3895–3903 (2014). (10.1021/nn5007607) / ACS Nano by M Yamamoto (2014)
  21. Ruppert, C., Aslan, O. B. & Heinz, T. F. Optical properties and band gap of single- and few-layer MoTe2 crystals. Nano Lett. 14, 6231–6236 (2014). (10.1021/nl502557g) / Nano Lett. by C Ruppert (2014)
  22. Yang, H. et al. Graphene barristor, a triode device with a gate-controlled Schottky barrier. Science 336, 1140–1143 (2012). (10.1126/science.1220527) / Science by H Yang (2012)
  23. Xu, R. et al. Large magnetoresistance in non-magnetic silver chalcogenides. Nature 390, 57–60 (1997). (10.1038/36306) / Nature by R Xu (1997)
  24. Kane, C. L. & Mele, E. J. Quantum spin Hall effect in graphene. Phys. Rev. Lett. 95, 226801 (2005). (10.1103/PhysRevLett.95.226801) / Phys. Rev. Lett. by CL Kane (2005)
  25. Xu, Y. et al. Large-gap quantum spin Hall insulators in tin films. Phys. Rev. Lett. 111, 136804 (2013). (10.1103/PhysRevLett.111.136804) / Phys. Rev. Lett. by Y Xu (2013)
  26. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996). (10.1103/PhysRevLett.77.3865) / Phys. Rev. Lett. by JP Perdew (1996)
  27. Blochl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953–17979 (1994). (10.1103/PhysRevB.50.17953) / Phys. Rev. B by PE Blochl (1994)
  28. Kresse, G. & Furthmuller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996). (10.1103/PhysRevB.54.11169) / Phys. Rev. B by G Kresse (1996)
  29. Heyd, J., Scuseria, G. E. & Ernzerhof, M. Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys. 118, 8207–8215 (2003). (10.1063/1.1564060) / J. Chem. Phys. by J Heyd (2003)
  30. Rietveld, H. M. A profile refinement method for nuclear and magnetic structures. J. Appl. Crystallogr. 2, 65–71 (1969). (10.1107/S0021889869006558) / J. Appl. Crystallogr. by HM Rietveld (1969)
Dates
Type When
Created 10 years, 3 months ago (May 4, 2015, 11:05 a.m.)
Deposited 4 months, 1 week ago (April 11, 2025, 2:18 a.m.)
Indexed 2 days, 12 hours ago (Aug. 20, 2025, 8:38 a.m.)
Issued 10 years, 3 months ago (May 4, 2015)
Published 10 years, 3 months ago (May 4, 2015)
Published Online 10 years, 3 months ago (May 4, 2015)
Published Print 10 years, 2 months ago (June 1, 2015)
Funders 0

None

@article{Keum_2015, title={Bandgap opening in few-layered monoclinic MoTe2}, volume={11}, ISSN={1745-2481}, url={http://dx.doi.org/10.1038/nphys3314}, DOI={10.1038/nphys3314}, number={6}, journal={Nature Physics}, publisher={Springer Science and Business Media LLC}, author={Keum, Dong Hoon and Cho, Suyeon and Kim, Jung Ho and Choe, Duk-Hyun and Sung, Ha-Jun and Kan, Min and Kang, Haeyong and Hwang, Jae-Yeol and Kim, Sung Wng and Yang, Heejun and Chang, K. J. and Lee, Young Hee}, year={2015}, month=may, pages={482–486} }