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Wu, S., Ross, J. S., Liu, G.-B., Aivazian, G., Jones, A., Fei, Z., Zhu, W., Xiao, D., Yao, W., Cobden, D., & Xu, X. (2013). Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2. Nature Physics, 9(3), 149–153.

Authors 11
  1. Sanfeng Wu (first)
  2. Jason S. Ross (additional)
  3. Gui-Bin Liu (additional)
  4. Grant Aivazian (additional)
  5. Aaron Jones (additional)
  6. Zaiyao Fei (additional)
  7. Wenguang Zhu (additional)
  8. Di Xiao (additional)
  9. Wang Yao (additional)
  10. David Cobden (additional)
  11. Xiaodong Xu (additional)
References 29 Referenced 582
  1. Xiao, D., Chang, M-C. & Niu, Q. Berry phase effects on electronic properties. Rev. Mod. Phys. 82, 1959–2007 (2010). (10.1103/RevModPhys.82.1959) / Rev. Mod. Phys. by D Xiao (2010)
  2. Mak, K. F., Lui, C. H., Shan, J. & Heinz, T. F. Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy. Phys. Rev. Lett. 102, 256405 (2009). (10.1103/PhysRevLett.102.256405) / Phys. Rev. Lett. by KF Mak (2009)
  3. Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820–823 (2009). (10.1038/nature08105) / Nature by Y Zhang (2009)
  4. Xiao, D., Yao, W. & Niu, Q. Valley-contrasting physics in graphene: Magnetic moment and topological transport. Phys. Rev. Lett. 99, 236809 (2007). (10.1103/PhysRevLett.99.236809) / Phys. Rev. Lett. by D Xiao (2007)
  5. Yao, W., Xiao, D. & Niu, Q. Valley-dependent optoelectronics from inversion symmetry breaking. Phys. Rev. B 77, 235406 (2008). (10.1103/PhysRevB.77.235406) / Phys. Rev. B by W Yao (2008)
  6. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010). (10.1103/PhysRevLett.105.136805) / Phys. Rev. Lett. by KF Mak (2010)
  7. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271–1275 (2010). (10.1021/nl903868w) / Nano Lett. by A Splendiani (2010)
  8. Souza, I. & Vanderbilt, D. Dichroic f-sum rule and the orbital magnetization of crystals. Phys. Rev. B 77, 054438 (2008). (10.1103/PhysRevB.77.054438) / Phys. Rev. B by I Souza (2008)
  9. Xiao, D., Liu, G-B., Feng, W., Xu, X. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012). (10.1103/PhysRevLett.108.196802) / Phys. Rev. Lett. by D Xiao (2012)
  10. Zeng, H., Dai, J., Yao, W., Xiao, D. & Xiaodong, C. Valley polarization in MoS2 monolayers by optical pumping. Nature Nanotech. 7, 490–493 (2012). (10.1038/nnano.2012.95) / Nature Nanotech. by H Zeng (2012)
  11. Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nature Nanotech. 7, 494–498 (2012). (10.1038/nnano.2012.96) / Nature Nanotech. by KF Mak (2012)
  12. Cao, T., Feng, J., Shi, J., Niu, Q. & Wang, E. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nature Commun. 3, 887 (2012). (10.1038/ncomms1882) / Nature Commun. by T Cao (2012)
  13. Akhmerov, A. R. & Beenakker, C. W. J. Detection of valley polarization in graphene by a superconducting contact. Phys. Rev. Lett. 98, 157003 (2007). (10.1103/PhysRevLett.98.157003) / Phys. Rev. Lett. by AR Akhmerov (2007)
  14. Rycerz, A., Tworzydlo, J. & Beenakker, C. W. J. Valley filter and valley valve in graphene. Nature Phys. 3, 172–175 (2007). (10.1038/nphys547) / Nature Phys. by A Rycerz (2007)
  15. Zhu, Z-G. & Berakdar, J. Berry-curvature-mediated valley-Hall and charge-Hall effects in graphene via strain engineering. Phys. Rev. B 84, 195460 (2011). (10.1103/PhysRevB.84.195460) / Phys. Rev. B by Z-G Zhu (2011)
  16. Korn, T., Heydrich, S., Hirmer, M., Schmutzler, J. & Schuller, C. Low-temperature photocarrier dynamics in monolayer MoS2 . Appl. Phys. Lett. 99, 102109 (2011). (10.1063/1.3636402) / Appl. Phys. Lett. by T Korn (2011)
  17. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotech. 6, 147–150 (2011). (10.1038/nnano.2010.279) / Nature Nanotech. by B Radisavljevic (2011)
  18. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451–10453 (2005). (10.1073/pnas.0502848102) / Proc. Natl Acad. Sci. USA by KS Novoselov (2005)
  19. Eda, G. et al. Photoluminescence from chemically exfoliated MoS2 . Nano Lett. 11, 5111–5116 (2011). (10.1021/nl201874w) / Nano Lett. by G Eda (2011)
  20. Cheiwchanchamnangij, T. & Lambrecht, W. R. L. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2 . Phys. Rev. B 85, 205302 (2012). (10.1103/PhysRevB.85.205302) / Phys. Rev. B by T Cheiwchanchamnangij (2012)
  21. Zhu, Z. Y., Cheng, Y. C. & Schwingenschlögl, U. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys. Rev. B 84, 153402 (2011). (10.1103/PhysRevB.84.153402) / Phys. Rev. B by ZY Zhu (2011)
  22. Yoon, Y., Ganapathi, K. & Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768–3773 (2011). (10.1021/nl2018178) / Nano Lett. by Y Yoon (2011)
  23. Popov, I., Seifert, G. & Tománek, D. Designing electrical contacts to MoS2 monolayers: A computational study. Phys. Rev. Lett. 108, 156802 (2012). (10.1103/PhysRevLett.108.156802) / Phys. Rev. Lett. by I Popov (2012)
  24. Radisavljevic, B., Whitwick, M. B. & Kis, A. Integrated circuits and logic operations based on single-layer MoS2 . ACS Nano 5, 9934–9938 (2011). (10.1021/nn203715c) / ACS Nano by B Radisavljevic (2011)
  25. Lee, C. et al. Anomalous lattice vibrations of single- and few-layer MoS2 . ACS Nano 4, 2695–2700 (2010). (10.1021/nn1003937) / ACS Nano by C Lee (2010)
  26. Jiménez Sandoval, S., Yang, D., Frindt, R. F. & Irwin, J. C. Raman study and lattice dynamics of single molecular layers of MoS2 . Phys. Rev. B 44, 3955 (1991). (10.1103/PhysRevB.44.3955) / Phys. Rev. B by S Jiménez Sandoval (1991)
  27. Chakraborty, B. et al. Symmetry-dependent phonon renormalization in monolayer MoS2 transistor. Phys. Rev. B 85, 161403 (2012). (10.1103/PhysRevB.85.161403) / Phys. Rev. B by B Chakraborty (2012)
  28. Balocchi, A. et al. Full electrical control of the electron spin relaxation in GaAs quantum wells. Phys. Rev. Lett. 107, 136604 (2011). (10.1103/PhysRevLett.107.136604) / Phys. Rev. Lett. by A Balocchi (2011)
  29. Koralek, J. D. et al. Emergence of the persistent spin helix in semiconductor quantum wells. Nature 458, 610–614 (2009). (10.1038/nature07871) / Nature by JD Koralek (2009)
Dates
Type When
Created 12 years, 6 months ago (Jan. 27, 2013, 3:51 p.m.)
Deposited 4 months, 1 week ago (April 10, 2025, 8:41 a.m.)
Indexed 2 days, 16 hours ago (Aug. 19, 2025, 6:12 a.m.)
Issued 12 years, 6 months ago (Jan. 27, 2013)
Published 12 years, 6 months ago (Jan. 27, 2013)
Published Online 12 years, 6 months ago (Jan. 27, 2013)
Published Print 12 years, 5 months ago (March 1, 2013)
Funders 0

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@article{Wu_2013, title={Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2}, volume={9}, ISSN={1745-2481}, url={http://dx.doi.org/10.1038/nphys2524}, DOI={10.1038/nphys2524}, number={3}, journal={Nature Physics}, publisher={Springer Science and Business Media LLC}, author={Wu, Sanfeng and Ross, Jason S. and Liu, Gui-Bin and Aivazian, Grant and Jones, Aaron and Fei, Zaiyao and Zhu, Wenguang and Xiao, Di and Yao, Wang and Cobden, David and Xu, Xiaodong}, year={2013}, month=jan, pages={149–153} }