High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
10.1038/nnano.2016.242
Crossref journal-article
Springer Science and Business Media LLC
Nature Nanotechnology (297)
Bibliography

Bandurin, D. A., Tyurnina, A. V., Yu, G. L., Mishchenko, A., Zólyomi, V., Morozov, S. V., Kumar, R. K., Gorbachev, R. V., Kudrynskyi, Z. R., Pezzini, S., Kovalyuk, Z. D., Zeitler, U., Novoselov, K. S., Patanè, A., Eaves, L., Grigorieva, I. V., Fal’ko, V. I., Geim, A. K., & Cao, Y. (2016). High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nature Nanotechnology, 12(3), 223–227.

Authors 19
  1. Denis A. Bandurin (first)
  2. Anastasia V. Tyurnina (additional)
  3. Geliang L. Yu (additional)
  4. Artem Mishchenko (additional)
  5. Viktor Zólyomi (additional)
  6. Sergey V. Morozov (additional)
  7. Roshan Krishna Kumar (additional)
  8. Roman V. Gorbachev (additional)
  9. Zakhar R. Kudrynskyi (additional)
  10. Sergio Pezzini (additional)
  11. Zakhar D. Kovalyuk (additional)
  12. Uli Zeitler (additional)
  13. Konstantin S. Novoselov (additional)
  14. Amalia Patanè (additional)
  15. Laurence Eaves (additional)
  16. Irina V. Grigorieva (additional)
  17. Vladimir I. Fal'ko (additional)
  18. Andre K. Geim (additional)
  19. Yang Cao (additional)
References 31 Referenced 1,157
  1. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451–10453 (2005). (10.1073/pnas.0502848102) / Proc. Natl Acad. Sci. USA by KS Novoselov (2005)
  2. Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499, 419–425 (2013). (10.1038/nature12385) / Nature by AK Geim (2013)
  3. Castro Neto, A. H., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109–162 (2009). (10.1103/RevModPhys.81.109) / Rev. Mod. Phys by AH Castro Neto (2009)
  4. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 2–5 (2010). (10.1103/PhysRevLett.105.136805) / Phys. Rev. Lett. by KF Mak (2010)
  5. Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotech. 10, 534–540 (2015). (10.1038/nnano.2015.70) / Nat. Nanotech. by X Cui (2015)
  6. Fallahazad, B. et al. Shubnikov–de Haas oscillations of high-mobility holes in monolayer and bilayer WSe2: Landau level degeneracy, effective mass, and negative compressibility. Phys. Rev. Lett. 116, 086601 (2016). (10.1103/PhysRevLett.116.086601) / Phys. Rev. Lett by B Fallahazad (2016)
  7. Xu, S. et al. Universal low-temperature ohmic contacts for quantum transport in transition metal dichalcogenides. 2D Mater. 3, 021007 (2016). (10.1088/2053-1583/3/2/021007) / 2D Mater by S Xu (2016)
  8. Tayari, V. et al. Two-dimensional magnetotransport in a black phosphorus naked quantum well. Nat. Commun. 6, 7702 (2015). (10.1038/ncomms8702) / Nat. Commun by V Tayari (2015)
  9. Li, L. et al. Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films. Nat. Nanotech. 10, 608–613 (2015). (10.1038/nnano.2015.91) / Nat. Nanotech. by L Li (2015)
  10. Gillgren, N. et al. Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures. 2D Mater. 2, 011001 (2014). (10.1088/2053-1583/2/1/011001) / 2D Mater by N Gillgren (2014)
  11. Li, L. et al. Quantum Hall effect in black phosphorus two-dimensional electron system. Nat. Nanotech. 11, 6–10 (2016). (10.1038/nnano.2015.274) / Nat. Nanotech. by L Li (2016)
  12. Kuroda, N. & Nishina, Y. Resonance Raman scattering study on exciton and polaron anisotropies in InSe. Solid State Commun. 34, 481–484 (1980). (10.1016/0038-1098(80)90656-0) / Solid State Commun by N Kuroda (1980)
  13. Kress-Rogers, E., Nicholas, R. J., Portal, J. C. & Chevy, A. Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSe. Solid State Commun. 44, 379–383 (1982). (10.1016/0038-1098(82)90874-2) / Solid State Commun. by E Kress-Rogers (1982)
  14. Segura, A., Pomer, F., Cantarero, A., Krause, W. & Chevy, A. Electron scattering mechanisms in n-type indium selenide. Phys. Rev. B 29, 5708–5717 (1984). (10.1103/PhysRevB.29.5708) / Phys. Rev. B by A Segura (1984)
  15. Camassel, J., Merle, P., Mathieu, H. & Chevy, A. Excitonic absorption edge of indium selenide. Phys. Rev. B 17, 4718–4725 (1978). (10.1103/PhysRevB.17.4718) / Phys. Rev. B by J Camassel (1978)
  16. Lei, S. et al. Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe. ACS Nano 8, 1263–1272 (2014). (10.1021/nn405036u) / ACS Nano by S Lei (2014)
  17. Mudd, G. W. et al. Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement. Adv. Mater. 25, 5714–5718 (2013). (10.1002/adma.201302616) / Adv. Mater. by GW Mudd (2013)
  18. Brotons-Gisbert, M. et al. Nanotexturing to enhance photoluminescent response of atomically thin indium selenide with highly tunable band gap. Nano Lett. 16, 3221–3229 (2016). (10.1021/acs.nanolett.6b00689) / Nano Lett. by M Brotons-Gisbert (2016)
  19. Zolyomi, V., Drummond, N. D. & Fal'ko, V. I. Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations. Phys. Rev. B 89, 1–8 (2014). (10.1103/PhysRevB.89.205416) / Phys. Rev. B by V Zolyomi (2014)
  20. Feng, W. et al. Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response. J. Mater. Chem. C 3, 7022–7028 (2015). (10.1039/C5TC01208B) / J. Mater. Chem. C by W Feng (2015)
  21. Mudd, G. W. et al. High broad-band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures. Adv. Mater. 27, 3760–3766 (2015). (10.1002/adma.201500889) / Adv. Mater. by GW Mudd (2015)
  22. Tamalampudi, S. R. et al. High performance and bendable few-layered InSe photodetectors with broad spectral response. Nano Lett. 14, 2800–2806 (2014). (10.1021/nl500817g) / Nano Lett. by SR Tamalampudi (2014)
  23. Feng, W., Zheng, W., Cao, W. & Hu, P. Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface. Adv. Mater. 26, 6587–6593 (2014). (10.1002/adma.201402427) / Adv. Mater. by W Feng (2014)
  24. Sucharitakul, S. et al. Intrinsic electron mobility exceeding 103 cm2/Vs in multilayer InSe FETs. Nano Lett. 15, 3815–3819 (2015). (10.1021/acs.nanolett.5b00493) / Nano Lett. by S Sucharitakul (2015)
  25. Kress-Rogers, E. et al. The electric sub-band structure of electron accumulation layers in InSe from Shubnikov–de Haas oscillations and inter-sub-band resonance. J. Phys. C 16, 4285–4295 (2000). (10.1088/0022-3719/16/21/027) / J. Phys. C by E Kress-Rogers (2000)
  26. Wang, L. et al. One-dimensional electrical contact to a two-dimensional material. Science 342, 614–617 (2013). (10.1126/science.1244358) / Science by L Wang (2013)
  27. Kretinin, A. V. et al. Electronic properties of graphene encapsulated with different two-dimensional atomic crystals. Nano Lett. 14, 3270–3276 (2014). (10.1021/nl5006542) / Nano Lett. by AV Kretinin (2014)
  28. Cao, Y. et al. Quality heterostructures from two-dimensional crystals unstable in air by their assembly in inert atmosphere. Nano Lett. 15, 4914–4921 (2015). (10.1021/acs.nanolett.5b00648) / Nano Lett. by Y Cao (2015)
  29. Sun, C . et al. Ab initio study of carrier mobility of few-layer InSe. Appl. Phys. Express 9, 035203 (2016). (10.7567/APEX.9.035203) / Appl. Phys. Express by C Sun (2016)
  30. Castellanos-Gomez, A. Why all the fuss about 2D semiconductors? Nat. Photon. 10, 202–204 (2016). (10.1038/nphoton.2016.53) / Nat. Photon. by A Castellanos-Gomez (2016)
  31. Favron, A. et al. Photooxidation and quantum confinement effects in exfoliated black phosphorus. Nat. Mater. 14, 826–832 (2015). (10.1038/nmat4299) / Nat. Mater. by A Favron (2015)
Dates
Type When
Created 8 years, 9 months ago (Nov. 21, 2016, 1:29 p.m.)
Deposited 2 years, 3 months ago (May 18, 2023, 7:47 p.m.)
Indexed 20 hours, 56 minutes ago (Aug. 21, 2025, 1:22 p.m.)
Issued 8 years, 9 months ago (Nov. 21, 2016)
Published 8 years, 9 months ago (Nov. 21, 2016)
Published Online 8 years, 9 months ago (Nov. 21, 2016)
Published Print 8 years, 5 months ago (March 1, 2017)
Funders 0

None

@article{Bandurin_2016, title={High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe}, volume={12}, ISSN={1748-3395}, url={http://dx.doi.org/10.1038/nnano.2016.242}, DOI={10.1038/nnano.2016.242}, number={3}, journal={Nature Nanotechnology}, publisher={Springer Science and Business Media LLC}, author={Bandurin, Denis A. and Tyurnina, Anastasia V. and Yu, Geliang L. and Mishchenko, Artem and Zólyomi, Viktor and Morozov, Sergey V. and Kumar, Roshan Krishna and Gorbachev, Roman V. and Kudrynskyi, Zakhar R. and Pezzini, Sergio and Kovalyuk, Zakhar D. and Zeitler, Uli and Novoselov, Konstantin S. and Patanè, Amalia and Eaves, Laurence and Grigorieva, Irina V. and Fal’ko, Vladimir I. and Geim, Andre K. and Cao, Yang}, year={2016}, month=nov, pages={223–227} }