DOI: 10.1038/nmat5028. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

10.1038/nmat5028

Crossref journal-article

Springer Science and Business Media LLC

Nature Materials (297)

Bibliography

Jiang, J., Bai, Z. L., Chen, Z. H., He, L., Zhang, D. W., Zhang, Q. H., Shi, J. A., Park, M. H., Scott, J. F., Hwang, C. S., & Jiang, A. Q. (2017). Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. Nature Materials, 17(1), 49â56.

Authors 11

Jun Jiang (first)
Zi Long Bai (additional)
Zhi Hui Chen (additional)
Long He (additional)
David Wei Zhang (additional)
Qing Hua Zhang (additional)
Jin An Shi (additional)
Min Hyuk Park (additional)
James F. Scott (additional)
Cheol Seong Hwang (additional)
An Quan Jiang (additional)

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Dates

Type	When
Created	7 years, 9 months ago (Nov. 20, 2017, 11:02 a.m.)
Deposited	3 years, 1 month ago (July 6, 2022, 3:24 p.m.)
Indexed	2 weeks ago (Aug. 6, 2025, 9:55 a.m.)
Issued	7 years, 9 months ago (Nov. 20, 2017)
Published	7 years, 9 months ago (Nov. 20, 2017)
Published Online	7 years, 9 months ago (Nov. 20, 2017)
Published Print	7 years, 7 months ago (Jan. 1, 2018)

Funders 0

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BibTeX

@article{Jiang_2017, title={Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories}, volume={17}, ISSN={1476-4660}, url={http://dx.doi.org/10.1038/nmat5028}, DOI={10.1038/nmat5028}, number={1}, journal={Nature Materials}, publisher={Springer Science and Business Media LLC}, author={Jiang, Jun and Bai, Zi Long and Chen, Zhi Hui and He, Long and Zhang, David Wei and Zhang, Qing Hua and Shi, Jin An and Park, Min Hyuk and Scott, James F. and Hwang, Cheol Seong and Jiang, An Quan}, year={2017}, month=nov, pages={49–56} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        6
      ]
    ],
    "date-time": "2025-08-06T13:55:24Z",
    "timestamp": 1754488524510,
    "version": "3.37.3"
  },
  "reference-count": 45,
  "publisher": "Springer Science and Business Media LLC",
  "issue": "1",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2017,
            11,
            20
          ]
        ],
        "date-time": "2017-11-20T00:00:00Z",
        "timestamp": 1511136000000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://www.springer.com/tdm"
    },
    {
      "start": {
        "date-parts": [
          [
            2017,
            11,
            20
          ]
        ],
        "date-time": "2017-11-20T00:00:00Z",
        "timestamp": 1511136000000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://www.springer.com/tdm"
    }
  ],
  "content-domain": {
    "domain": [
      "link.springer.com"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2018,
        1,
        1
      ]
    ]
  },
  "DOI": "10.1038/nmat5028",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2017,
        11,
        20
      ]
    ],
    "date-time": "2017-11-20T16:02:44Z",
    "timestamp": 1511193764000
  },
  "page": "49-56",
  "update-policy": "https://doi.org/10.1007/springer_crossmark_policy",
  "source": "Crossref",
  "is-referenced-by-count": 213,
  "title": "Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories",
  "prefix": "10.1038",
  "volume": "17",
  "author": [
    {
      "given": "Jun",
      "family": "Jiang",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Zi Long",
      "family": "Bai",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Zhi Hui",
      "family": "Chen",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Long",
      "family": "He",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "David Wei",
      "family": "Zhang",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Qing Hua",
      "family": "Zhang",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Jin An",
      "family": "Shi",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Min Hyuk",
      "family": "Park",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "James F.",
      "family": "Scott",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "ORCID": "https://orcid.org/0000-0002-6254-9758",
      "authenticated-orcid": false,
      "given": "Cheol Seong",
      "family": "Hwang",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "An Quan",
      "family": "Jiang",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "297",
  "published-online": {
    "date-parts": [
      [
        2017,
        11,
        20
      ]
    ]
  },
  "reference": [
    {
      "key": "BFnmat5028_CR1",
      "doi-asserted-by": "publisher",
      "first-page": "e1700512",
      "DOI": "10.1126/sciadv.1700512",
      "volume": "3",
      "author": "P Sharma",
      "year": "2017",
      "unstructured": "Sharma, P. et al. Nonvolatile ferroelectric domain wall memory. Sci. Adv. 3, e1700512 (2017).",
      "journal-title": "Sci. Adv."
    },
    {
      "key": "BFnmat5028_CR2",
      "doi-asserted-by": "publisher",
      "first-page": "1323",
      "DOI": "10.1002/adma.201203226",
      "volume": "25",
      "author": "P Sharma",
      "year": "2013",
      "unstructured": "Sharma, P., McQuaid, R. G. P., McGilly, L. J., Gregg, J. M. & Gruverman, A. Nanoscale dynamics of superdomain boundaries in single-crystal BaTiO3 lamellae. Adv. Mater. 25, 1323\u20131330 (2013).",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "BFnmat5028_CR3",
      "first-page": "218",
      "volume-title": "Symp. VLSI Tech. Dig.",
      "author": "Y Shimojo",
      "year": "2009",
      "unstructured": "Shimojo, Y. et al. High-density and high-speed 128Mb chain FeRAMTM with SDRAM-compatible DDR2 interface. Symp. VLSI Tech. Dig. 218\u2013219 (Japan\u00a0Society of Applied Physics, 2009)."
    },
    {
      "key": "BFnmat5028_CR4",
      "doi-asserted-by": "publisher",
      "first-page": "296",
      "DOI": "10.1016/j.mee.2005.04.084",
      "volume": "80",
      "author": "H Kohlstedt",
      "year": "2005",
      "unstructured": "Kohlstedt, H. et al. Current status and challenges of ferroelectric memory devices. Microelectron. Eng. 80, 296\u2013304 (2005).",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "BFnmat5028_CR5",
      "doi-asserted-by": "publisher",
      "first-page": "2881",
      "DOI": "10.1002/adma.200802094",
      "volume": "21",
      "author": "DS Rana",
      "year": "2009",
      "unstructured": "Rana, D. S. et al. Understanding the nature of ultrafast polarization dynamics of ferroelectric memory in the multiferroic BiFeO3 . Adv. Mater. 21, 2881\u20132885 (2009).",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "BFnmat5028_CR6",
      "doi-asserted-by": "publisher",
      "first-page": "506",
      "DOI": "10.1038/nature01501",
      "volume": "422",
      "author": "J Junquera",
      "year": "2003",
      "unstructured": "Junquera, J. & Ghosez, P. Critical thickness for ferroelectricity in perovskite ultrathin films. Nature 422, 506\u2013509 (2003).",
      "journal-title": "Nature"
    },
    {
      "key": "BFnmat5028_CR7",
      "doi-asserted-by": "publisher",
      "first-page": "1650",
      "DOI": "10.1126/science.1098252",
      "volume": "304",
      "author": "DD Fong",
      "year": "2004",
      "unstructured": "Fong, D. D. et al. Ferroelectricity in ultrathin perovskite films. Science 304, 1650\u20131653 (2004).",
      "journal-title": "Science"
    },
    {
      "key": "BFnmat5028_CR8",
      "doi-asserted-by": "publisher",
      "first-page": "1428",
      "DOI": "10.1021/nl103372a",
      "volume": "11",
      "author": "H Ko",
      "year": "2011",
      "unstructured": "Ko, H. et al. High-resolution field effect sensing of ferroelectric charges. Nano\u00a0Lett. 11, 1428\u20131433 (2011).",
      "journal-title": "Nano\u00a0Lett."
    },
    {
      "key": "BFnmat5028_CR9",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/978-1-4899-7537-9",
      "volume-title": "Emerging Non-volatile Memories",
      "author": "S Hong",
      "year": "2014",
      "unstructured": "Hong, S. & Kim, Y. in Emerging Non-volatile Memories (eds Hong, S., Auciello, O. & Wouters, D.) (Springer, 2014)."
    },
    {
      "key": "BFnmat5028_CR10",
      "doi-asserted-by": "publisher",
      "first-page": "637",
      "DOI": "10.1088/0957-4484/14/6/314",
      "volume": "14",
      "author": "Y Cho",
      "year": "2003",
      "unstructured": "Cho, Y. et al. Terabit inch2 ferroelectric data storage using scanning nonlinear dielectric microscopy nanodomain engineering system. Nanotechnology 14, 637\u2013642 (2003).",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "BFnmat5028_CR11",
      "doi-asserted-by": "publisher",
      "first-page": "225501",
      "DOI": "10.1088/0957-4484/20/22/225501",
      "volume": "20",
      "author": "MG Forrester",
      "year": "2009",
      "unstructured": "Forrester, M. G. et al. Charge-based scanning probe readback of nanometer-scale ferroelectric domain patterns at megahertz rates. Nanotechnology 20, 225501 (2009).",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "BFnmat5028_CR12",
      "doi-asserted-by": "publisher",
      "first-page": "6566",
      "DOI": "10.1073/pnas.1324178111",
      "volume": "111",
      "author": "S Hong",
      "year": "2014",
      "unstructured": "Hong, S. et al. Charge gradient microscopy. Proc. Natl Acad. Sci. USA 111, 6566\u20136569 (2014).",
      "journal-title": "Proc. Natl Acad. Sci. USA"
    },
    {
      "key": "BFnmat5028_CR13",
      "doi-asserted-by": "publisher",
      "first-page": "1198",
      "DOI": "10.1016/j.mee.2009.12.014",
      "volume": "87",
      "author": "J Heck",
      "year": "2010",
      "unstructured": "Heck, J. et al. Ultra-high density MEMS probe memory device. Microelectron. Eng. 87, 1198\u20131203 (2010).",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "BFnmat5028_CR14",
      "doi-asserted-by": "publisher",
      "first-page": "077203",
      "DOI": "10.1103/PhysRevLett.108.077203",
      "volume": "108",
      "author": "W Wu",
      "year": "2012",
      "unstructured": "Wu, W., Horibe, Y., Lee, N., Cheong, S.-W. & Guest, J. R. Conduction of topologically protected charged ferroelectric domain walls. Phys. Rev. Lett. 108, 077203 (2012).",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "BFnmat5028_CR15",
      "doi-asserted-by": "publisher",
      "first-page": "3936",
      "DOI": "10.1002/adfm.201201174",
      "volume": "22",
      "author": "M Schr\u00f6der",
      "year": "2012",
      "unstructured": "Schr\u00f6der, M. et al. Conducting domain walls in lithium niobate single crystals. Adv. Funct. Mater. 22, 3936\u20133944 (2012).",
      "journal-title": "Adv. Funct. Mater."
    },
    {
      "key": "BFnmat5028_CR16",
      "doi-asserted-by": "publisher",
      "first-page": "284",
      "DOI": "10.1038/nmat3249",
      "volume": "11",
      "author": "D Meier",
      "year": "2012",
      "unstructured": "Meier, D. et al. Anisotropic conductance at improper ferroelectric domain walls. Nat. Mater. 11, 284\u2013288 (2012).",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "BFnmat5028_CR17",
      "doi-asserted-by": "publisher",
      "first-page": "1808",
      "DOI": "10.1038/ncomms2839",
      "volume": "4",
      "author": "T Sluka",
      "year": "2013",
      "unstructured": "Sluka, T., Tagantsev, A. K., Bednyakov, P. & Setter, N. Free-electron gas at charged domain walls in insulating BaTiO3 . Nat. Commun. 4, 1808 (2013).",
      "journal-title": "Nat. Commun."
    },
    {
      "key": "BFnmat5028_CR18",
      "doi-asserted-by": "publisher",
      "first-page": "104104",
      "DOI": "10.1103/PhysRevB.86.104104",
      "volume": "86",
      "author": "MY Gureev",
      "year": "2012",
      "unstructured": "Gureev, M. Y., Mokry, P., Tagantsev, A. K. & Setter, N. Ferroelectric charged domain walls in an applied electric field. Phys. Rev. B 86, 104104 (2012).",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "BFnmat5028_CR19",
      "doi-asserted-by": "publisher",
      "first-page": "614",
      "DOI": "10.1038/nnano.2015.114",
      "volume": "10",
      "author": "A Crassous",
      "year": "2015",
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      "journal-title": "Nat. Nanotech."
    },
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      "key": "BFnmat5028_CR20",
      "doi-asserted-by": "publisher",
      "first-page": "127601",
      "DOI": "10.1103/PhysRevLett.107.127601",
      "volume": "107",
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    },
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      "first-page": "229",
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      "volume": "8",
      "author": "J Seidel",
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      "first-page": "047601",
      "DOI": "10.1103/PhysRevLett.109.047601",
      "volume": "109",
      "author": "A Lubk",
      "year": "2012",
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    },
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      "key": "BFnmat5028_CR23",
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      "first-page": "622",
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      "author": "JA Mundy",
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    },
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      "key": "BFnmat5028_CR24",
      "doi-asserted-by": "publisher",
      "first-page": "97",
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      "author": "JB Johnson",
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      "first-page": "110",
      "DOI": "10.1103/PhysRev.32.110",
      "volume": "32",
      "author": "H Nyquist",
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      "unstructured": "Nyquist, H. Thermal agitation of electric charge in conductors. Phys. Rev. 32, 110\u2013113 (1928).",
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      "first-page": "6574",
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      "first-page": "370",
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      "volume": "516",
      "author": "JT Heron",
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    },
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      "key": "BFnmat5028_CR28",
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      "first-page": "5377",
      "DOI": "10.1002/adma.201102254",
      "volume": "23",
      "author": "J Guyonnet",
      "year": "2011",
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      "journal-title": "Adv. Mater."
    },
    {
      "key": "BFnmat5028_CR29",
      "doi-asserted-by": "publisher",
      "first-page": "2662",
      "DOI": "10.1002/adma.200602972",
      "volume": "19",
      "author": "Y-H Chu",
      "year": "2007",
      "unstructured": "Chu, Y.-H. et al. Domain control in multiferroic BiFeO3 through substrate vicinality. Adv. Mater. 19, 2662\u20132666 (2007).",
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    },
    {
      "key": "BFnmat5028_CR30",
      "doi-asserted-by": "publisher",
      "first-page": "214",
      "DOI": "10.1063/1.4802249",
      "volume": "3",
      "author": "M Park",
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      "unstructured": "Park, M., No, K. & Hong, S. Visualization and manipulation of meta-stable polarization variants in multiferroic materials. AIP Adv. 3, 214\u2013217 (2013).",
      "journal-title": "AIP Adv."
    },
    {
      "key": "BFnmat5028_CR31",
      "doi-asserted-by": "publisher",
      "first-page": "968",
      "DOI": "10.1126/science.1206980",
      "volume": "334",
      "author": "CT Nelson",
      "year": "2011",
      "unstructured": "Nelson, C. T. et al. Domain dynamics during ferroelectric switching. Science 334, 968\u2013971 (2011).",
      "journal-title": "Science"
    },
    {
      "key": "BFnmat5028_CR32",
      "doi-asserted-by": "publisher",
      "first-page": "881",
      "DOI": "10.1038/nature06165",
      "volume": "449",
      "author": "Y-H Shin",
      "year": "2007",
      "unstructured": "Shin, Y.-H., Grinberg, I., Chen, I.-W. & Rappe, A. M. Nucleation and growth mechanism of ferroelectric domain-wall motion. Nature 449, 881\u2013884 (2007).",
      "journal-title": "Nature"
    },
    {
      "key": "BFnmat5028_CR33",
      "doi-asserted-by": "publisher",
      "first-page": "254010",
      "DOI": "10.1088/0957-4484/22/25/254010",
      "volume": "22",
      "author": "KM Kim",
      "year": "2011",
      "unstructured": "Kim, K. M. et al. A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure. Nanotechnology 22, 254010 (2011).",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "BFnmat5028_CR34",
      "doi-asserted-by": "publisher",
      "first-page": "322",
      "DOI": "10.1038/nmat4799",
      "volume": "16",
      "author": "T Rojac",
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      "unstructured": "Rojac, T. et al. Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects. Nat. Mater. 16, 322\u2013328 (2017).",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "BFnmat5028_CR35",
      "doi-asserted-by": "publisher",
      "first-page": "092905",
      "DOI": "10.1063/1.1870126",
      "volume": "86",
      "author": "YW So",
      "year": "2005",
      "unstructured": "So, Y. W., Kim, D. J., Noh, T. W., Yoon, J.-G. & Song, T. K. Polarization switching kinetics of epitaxial Pb(Zr0.4Ti0.6)O3 thin films. Appl. Phys. Lett. 86, 092905 (2005).",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "BFnmat5028_CR36",
      "doi-asserted-by": "publisher",
      "first-page": "690",
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      "volume": "95",
      "author": "WJ Merz",
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      "unstructured": "Merz, W. J. Domain formation and domain wall motions in ferroelectric BaTiO3 single crystals. Phys. Rev. 95, 690\u2013698 (1954).",
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    },
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      "key": "BFnmat5028_CR37",
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      "first-page": "053040",
      "DOI": "10.1088/1367-2630/14/5/053040",
      "volume": "14",
      "author": "V Shelke",
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      "unstructured": "Shelke, V. et al. Ferroelectric domain scaling and switching in ultrathin BiFeO3 films deposited on vicinal substrates. New J. Phys. 14, 053040 (2012).",
      "journal-title": "New J. Phys."
    },
    {
      "key": "BFnmat5028_CR38",
      "doi-asserted-by": "publisher",
      "first-page": "1106",
      "DOI": "10.1002/adma.201103983",
      "volume": "24",
      "author": "P Gao",
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      "unstructured": "Gao, P. et al. Direct observations of retention failure in ferroelectric memories. Adv. Mater. 24, 1106\u20131110 (2012).",
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    },
    {
      "key": "BFnmat5028_CR39",
      "doi-asserted-by": "publisher",
      "first-page": "1906",
      "DOI": "10.1021/nl104363x",
      "volume": "11",
      "author": "P Maksymovych",
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    },
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      "key": "BFnmat5028_CR40",
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      "first-page": "132902",
      "DOI": "10.1063/1.4869851",
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      "first-page": "403",
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    },
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      "key": "BFnmat5028_CR42",
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      "first-page": "054517",
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      "volume": "107",
      "author": "H Schroeder",
      "year": "2010",
      "unstructured": "Schroeder, H., Zhirnov, V. V., Cavin, R. K. & Waser, R. Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells. J. Appl. Phys. 107, 054517 (2010).",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "BFnmat5028_CR43",
      "doi-asserted-by": "publisher",
      "first-page": "254002",
      "DOI": "10.1088/0957-4484/22/25/254002",
      "volume": "22",
      "author": "KM Kim",
      "year": "2011",
      "unstructured": "Kim, K. M., Jeong, D. S. & Hwang, C. S. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook. Nanotechnology 22, 254002 (2011).",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "BFnmat5028_CR44",
      "doi-asserted-by": "publisher",
      "first-page": "309",
      "DOI": "10.1038/nmat2703",
      "volume": "9",
      "author": "SH Baek",
      "year": "2010",
      "unstructured": "Baek, S. H. et al. Ferroelastic switching for nanoscale non-volatile magnetoelectric devices. Nat. Mater. 9, 309\u2013314 (2010).",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "BFnmat5028_CR45",
      "doi-asserted-by": "publisher",
      "first-page": "125305",
      "DOI": "10.1103/PhysRevB.84.125305",
      "volume": "84",
      "author": "D Lee",
      "year": "2011",
      "unstructured": "Lee, D. et al. Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects. Phys. Rev. B 84, 125305 (2011).",
      "journal-title": "Phys. Rev. B"
    }
  ],
  "container-title": "Nature Materials",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://www.nature.com/articles/nmat5028.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://www.nature.com/articles/nmat5028",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "http://www.nature.com/doifinder/10.1038/nmat5028",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    },
    {
      "URL": "https://www.nature.com/articles/nmat5028.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        7,
        6
      ]
    ],
    "date-time": "2022-07-06T19:24:25Z",
    "timestamp": 1657135465000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://www.nature.com/articles/nmat5028"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2017,
        11,
        20
      ]
    ]
  },
  "references-count": 45,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          2018,
          1,
          1
        ]
      ]
    }
  },
  "alternative-id": [
    "BFnmat5028"
  ],
  "URL": "http://dx.doi.org/10.1038/nmat5028",
  "relation": {},
  "ISSN": [
    "1476-1122",
    "1476-4660"
  ],
  "subject": [],
  "container-title-short": "Nature Mater",
  "published": {
    "date-parts": [
      [
        2017,
        11,
        20
      ]
    ]
  },
  "assertion": [
    {
      "value": "19 May 2017",
      "order": 1,
      "name": "received",
      "label": "Received",
      "group": {
        "name": "ArticleHistory",
        "label": "Article History"
      }
    },
    {
      "value": "10 October 2017",
      "order": 2,
      "name": "accepted",
      "label": "Accepted",
      "group": {
        "name": "ArticleHistory",
        "label": "Article History"
      }
    },
    {
      "value": "20 November 2017",
      "order": 3,
      "name": "first_online",
      "label": "First Online",
      "group": {
        "name": "ArticleHistory",
        "label": "Article History"
      }
    },
    {
      "value": "The authors declare no competing financial interests.",
      "order": 1,
      "name": "Ethics",
      "group": {
        "name": "EthicsHeading",
        "label": "Competing interests"
      }
    }
  ]
}